Abstract
Controlled single step fabrication of silicon conical surface modulations on [311] silicon surface is reported utilizing KrF excimer laser [λ=248 nm] at laser fluence below ablation threshold laser fluence. When laser fluence was increased gradually from 0 to 0.2 J/cm2 for fixed 200 numbers of shots; first nanopores are observed to form at 0.1 J/cm2, then very shallow nanocones evolve as a function of laser fluence. At 0.2 J/cm2, nanoparticles are observed to form. Up to 0.15 J/cm2 the very shallow nanocone volume is smaller but increases at a fast rate with laser fluence thereafter. It is observed that the net material volume before and after the laser irradiation remains the same, a sign of the melting and resolidification without any ablation.
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References
D. Bäuerle (ed.), Laser Processing and Chemistry (Springer, Berlin, 2000)
D.G. Georgiev, K. Kolev, L.D. Laude, B. Mednikarov, N. Starbov, Appl. Phys. Lett. 72, 31 (1998)
C.A. Spindt, I. Brodie, L. Humphrey, E.R. Westerberg, J. Appl. Phys. 47, 5248 (1976)
L. Dvorson, I. Kymissis, A.I. Akinwande, J. Vac. Sci. Technol. B 21, 486 (2003)
H.H. Busta, J. Micromech. Microeng. 2, 43 (1992)
S. Turner, L. Kam, M. Isaacson, H.G. Craighead, W. Shain, J. Turner, J. Vac. Sci. Technol. B 15, 2848 (1997)
A.M.P. Turner, N. Dowel, S.W.P. Turner, L. Kam, M. Isaacson, J.N. Turner, H.G. Craighead, W. Shain, J. Biomed. Mater. Res. 51, 430 (2000)
M.P. Maher, J. Pine, J. Wright, Y.C. Tai, J. Neurosci. Methods 87, 45 (1999)
T.H. Her, R.J. Finlay, C. Wu, S. Deliwala, E. Mazur, Appl. Phys. Lett. 73, 1673 (1998)
A.J. Pedraza, J.D. Fowlkes, D.H. Lowndes, Appl. Phys. Lett. 74, 2322 (1999)
F. Sanchez, J.L. Morenza, R. Aguiar, J.C. Delgado, M. Varela, Appl. Phys. A: Mater. Sci. Process. 66, 83 (1998)
S.I. Dolgaev, S.V. Lavrishev, A.A. Lyalin, A.V. Simakin, V.V. Voronov, G.A. Shafeev, Appl. Phys. A: Mater. Sci. Process. 73, 177 (2001)
A.J. Pedraza, J.D. Fowlkes, Y.F. Guan, Appl. Phys. A: Mater. Sci. Process. 77, 277 (2003)
M. Belle, S. Lazarea, J. Appl. Phys. 73, 3516 (1993)
P. Kumar, M.G. Krishna, A. Bhattacharya, J. Nanosci. Nanotechnol. 9, 3224 (2009)
P. Kumar, M.G. Krishna, A.K. Bhattacharya, in Proceedings of ICTOPON-2009. Allahabad , India (2009). AIP Conf. Proc. 1147, 244
M.G. Krishna, P. Kumar, Non lithographic techniques for nanostructuring thin films and surfaces, in Emerging Trends in Nanotechnology for Manufacturing, ed by W. Ahmed (Williams Inc., USA, 2009)
N. Bloembergen, Appl. Opt. 12, 661 (1973)
T.S. Chung, J. Appl. Phys. 60, 55 (1986)
S. De Unamino, E. Fogarassy, Appl. Surf. Sci. 36, 1 (1989)
A.M. Prokhorov, I.A. Avrutsky, P.V. Bazakutsa, V.A. Sychugov, A.V. Tischenko, in Nonlinear Surface Electromagnetic Phenomena, ed. by H.E. Ponath, G.I. Stegeman (Elsevier, Amsterdam, 1991), p. 525
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Kumar, P. Surface modulation of silicon surface by excimer laser at laser fluence below ablation threshold. Appl. Phys. A 99, 245–250 (2010). https://doi.org/10.1007/s00339-009-5510-x
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DOI: https://doi.org/10.1007/s00339-009-5510-x