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Low Temperature Grown Be-doped InGaAs/InAlAs Photoconductive Antennas Excited at 1030 nm

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Abstract

We demonstrate pulsed THz emission and detection in low temperature (LT) MBE grown Be-doped InGaAs/InAlAs multi-nanolayer structures for an excitation wavelength of 1030 nm. We obtained spectra with a bandwidth of up to 3 THz. Furthermore, we performed differential transmission experiments to investigate the material’s relaxation time constants.

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Authors and Affiliations

  1. Fraunhofer Institute for Telecommunications, Heinrich-Hertz-Institute, Berlin, Germany

    R. J. B. Dietz, B. Globisch, H. Roehle, D. Stanze, S. Ullrich, B. Sartorius & M. Schell

  2. Menlo Systems GmbH, Martinsried, Germany

    R. Wilk

  3. Department of Physics, Philipps-Universität Marburg, Marburg, Germany

    S. Schumann, N. Born & M. Koch

Authors
  1. R. J. B. Dietz
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  2. R. Wilk
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  3. B. Globisch
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  4. H. Roehle
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  5. D. Stanze
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  6. S. Ullrich
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  7. S. Schumann
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  8. N. Born
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  9. M. Koch
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  10. B. Sartorius
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  11. M. Schell
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Correspondence to R. J. B. Dietz.

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Dietz, R.J.B., Wilk, R., Globisch, B. et al. Low Temperature Grown Be-doped InGaAs/InAlAs Photoconductive Antennas Excited at 1030 nm. J Infrared Milli Terahz Waves 34, 231–237 (2013). https://doi.org/10.1007/s10762-013-9968-4

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  • DOI: https://doi.org/10.1007/s10762-013-9968-4

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