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Simulation of Terahertz Generation from Lateral Diffusion Currents in Semiconductor Devices

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Abstract

In this paper we model the carrier dynamics and resulting THz emission from lateral diffusion currents within a semiconductor device which has been partially masked by a metallic mask. We present a numerical 1D model and a 1D Monte Carlo simulation which both demonstrate that regardless of the excitation laser spot shape we do not expect to see measurable THz emission in the direction of the optical pump propagation from lateral diffusion currents. Experimentally such devices do produce strong THz emission. We analytically investigate the role of the metal mask and we found that it suppresses the emission of dipoles that are in a region that is less than a wavelength away from the interface. The results from the numerical model are also included in a finite element analysis model of the geometry which predicts THz emission if and only if the metal mask is present.

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Authors and Affiliations

  1. School of Physics and Astronomy, University of Southampton, Southampton, United Kingdom

    Mark E. Barnes, Geoff J. Daniell, Paul Gow & Vasilis Apostolopoulos

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  1. Mark E. Barnes
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  2. Geoff J. Daniell
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  3. Paul Gow
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  4. Vasilis Apostolopoulos
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Correspondence to Mark E. Barnes.

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Barnes, M.E., Daniell, G.J., Gow, P. et al. Simulation of Terahertz Generation from Lateral Diffusion Currents in Semiconductor Devices. J Infrared Milli Terahz Waves 35, 1030–1044 (2014). https://doi.org/10.1007/s10762-014-0111-y

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  • DOI: https://doi.org/10.1007/s10762-014-0111-y

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