Abstract
Currently, gallium nitride (GaN) on silicon (Si) high-electron-mobility transistors (HEMT) are a promising candidate for designing improved power electronic circuits. The lattice mismatch between GaN and Si induces buffer/substrate leakage currents that impact the performance of the device. In this paper, four different model topologies have been demonstrated to simulate the buffer/substrate loading effect in GaN on a Si HEMT. A particle swarm optimization-based procedure has been developed to extract reliable values for the model elements. The models are evaluated in term of reliability of extraction and accuracy of S-parameter fitting. The results showed that the RC-based model topologies have more accurate simulation for buffer/substrate leakage than the RLC-based topology. This will contribute to reliable and accurate small-/large-signal modeling of the device for designing efficient power circuits.
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Using an Intel Core i7 processor with 8 GB of RAM and utilizing MATLAB's parallel computing toolbox.
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Acknowledgements
The authors gratefully acknowledge the support from the University of Sharjah, Sharjah, United Arab Emirates. The authors also thank École de technologie supérieure, Montreal, Canada for providing the measurements.
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Jarndal, A., Hussein, A.S. On reliable modeling of substrate/buffer loading effects in a gallium nitride high-electron-mobility transistor on silicon substrate. J Comput Electron 20, 503–514 (2021). https://doi.org/10.1007/s10825-020-01582-7
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DOI: https://doi.org/10.1007/s10825-020-01582-7