Abstract
Undoped and (In–S) co-doped ZnO films were grown by the spray pyrolysis method on glass substrates. The structural, morphological, optical and electrical properties of all the samples were studied in detail. X-ray diffraction results showed that all the samples have a hexagonal wurtzite structure with the preferred orientation that changed from (002) to the random orientation after (In–S) co-doping. From the scanning electron microscopy analysis, it is noted that the morphology of ZnO changed from rods to thin film upon (In–S) co-doping. Compared to undoped ZnO rods, transparency of (In–S) co-doped ZnO thin films significantly increased whereas their band gap values gradually decreased. From photoluminescence measurements, it is observed that the UV peak completely quenched after (In–S) co-doping while the deep level band intensity slightly increased especially for 2 and 4 at.% (In, S) co-doped ZnO samples. Compared with undoped sample, the carrier concentration enhanced with the increase of (In–S) co-doping to 4 at.% and further increase in the co-doping amount results in the decline of the conductivity.
Similar content being viewed by others
References
A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S.F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Kionuma, M. Kawasaki, Nat. Mater. 4, 42 (2005)
Y. Ryu, T.S. Lee, J.A. Lubguban, H.W. White, J.J. Kim, Y.S. Park, C.J. Youn, Appl. Phys. Lett. 88, 241108 (2006)
Z.K. Tang, G.K. Wong, P. Yu, M. Kawasaki, A. Ohtomo, H. Koinuma, Y. Segawa, Appl. Phys. Lett. 72, 3270 (1998)
H. Khallaf, G. Chai, O. Lupan, H. Heinrich, S. Park, A. Schulte, L. Chow, J. Phys. D Appl. Phys. 42, 135304 (2009)
M. Vafaee, M.S. Ghamsari, Mater. Lett. 61, 3265 (2007)
E. Bacaksiz, S. Aksu, S. Yılmaz, M. Parlak, M. Altunbaş, Thin Solid Films 518, 4076 (2010)
N. Lehraki, M.S. Aida, S. Abed, N. Attaf, A. Attaf, M. Poulain, Curr. Appl. Phys. 12, 1283 (2012)
S. Yılmaz, E. Bacaksız, I. Polat, Y. Atasoy, Curr. Appl. Phys. 12, 1326 (2012)
K.J. Chen, F.Y. Hung, S.J. Chang, S.J. Young, Z.S. Hu, S.P. Chang, J. Sol–Gel Sci. Technol. 54, 347 (2010)
G. Shen, J.H. Cho, J.K. Yoo, G.C. Yi, C.J. Lee, J. Phys. Chem. B 109, 5491 (2005)
E. Bacaksiz, M. Altunbaş, S. Özçelik, O. Oltulu, M. Tomakin, S. Yılmaz, Mater. Sci. Semicond. Process. 12, 118 (2009)
M.H. Aslan, A.Y. Oral, E. Mensur, A. Gül, E. Basaran, Sol. Energy Mater. Sol. Cells 82, 543 (2004)
B.-C. Jiao, X.-D. Zhang, C.-C. Wei, J. Sun, J. Ni, Y. Zhao, Chin. Phys. B 20, 037306 (2011)
J. Cho, Q. Lin, S. Yang, J.G. Simmons Jr., Y. Cheng, E. Lin, J. Yang, J.V. Foreman, H.O. Everitt, W. Yang, J. Kim, J. Liu, Nano Res. 5, 20 (2012)
H. Metin, F. Sat, S. Erat, M. Arı, J. Optoelectron. Adv. Mater. 10, 2622 (2008)
S. Yılmaz, M. Parlak, Ş. Özcan, M. Altunbaş, E. McGlynn, E. Bacaksız, Appl. Surf. Sci. 257, 9293 (2011)
S.S. Shinde, P.S. Shinde, C.H. Bhosale, K.Y. Rajpure, J. Phys. D Appl. Phys. 41, 105109 (2008)
G. Singh, S.B. Shrivastava, D. Jain, S. Pandya, T. Shripathi, V. Ganesan, Bull. Mater. Sci. 33, 581 (2010)
Y.R. Park, D. Jung, K.-C. Kim, S.J. Suh, T.S. Park, Y.S. Kim, J. Electroceram. 23, 536 (2009)
A.K.K. Kyaw, Y. Wang, D.W. Zhao, Z.H. Huang, X.T. Zeng, X.W. Sun, Phys. Status Solidi A 208, 2635 (2011)
Y.-Z. Yoo, Z.-W. Jin, T. Chikyow, T. Fukumura, M. Kawasaki, H. Koinuma, Appl. Phys. Lett. 81, 3798 (2002)
G.Z. Bosshard, J.M. de Souza e Silva, S.A.M. Lima, I.O. Mazali, F.A. Sigoli, New J. Chem. 35, 902 (2011)
B.K. Meyer, A. Polity, B. Farangis, Y. He, D. Hasselkamp, Th. Krämer, C. Wang, Appl. Phys. Lett. 85, 4929 (2004)
D.C. Reynolds, D.C. Look, B. Jobai, C.W. Litton, T.C. Collins, W. Harsch, G. Cantwell, Phys. Rev. B 57, 12151 (1998)
S. Yılmaz, E. McGlynn, E. Bacaksız, J. Cullen, R.K. Chellappan, Chem. Phys. Lett. 525, 72 (2012)
S.G. Hussain, D. Liu, X. Huang, K.M. Sulieman, J. Liu, H. Liu, R.U. Rasool, J. Phys. D Appl. Phys. 40, 7662 (2007)
H. Li, E. Xie, M. Qiao, X. Pan, Y. Zhang, J. Electron. Mater. 36, 1219 (2007)
S.G. Hussain, D. Liu, X. Huang, K.M. Sulieman, J. Liu, H. Liu, A.N.A. Alla, Smart Mater. Struct. 16, 1736 (2007)
N.H. Alvi, K.U. Hasan, O. Nur, M. Willander, Nanoscale Res. Lett. 6, 130 (2011)
N.H. Al-Hardan, A. Jalar, M.A.A. Hamid, L. Karkeng, R. Shamsudin, Int. J. Electrochem. Sci. 8, 6767 (2013)
E. Bacaksiz, S. Aksu, G. Çankaya, S. Yılmaz, İ. Polat, T. Küçükömeroğlu, A. Varilci, Thin Solid Films 519, 3679 (2011)
M.S. Arnold, P. Avouris, Z.W. Pang, Z.L. Wang, J. Phys. Chem. B 107, 659 (2003)
D.H. Kim, N.G. Cho, H.G. Kim, W.-Y. Choi, J. Electrochem. Soc. 154, H939 (2007)
Acknowledgments
All the authors would like to thank Assoc. Prof. Dr. M. Tomakin (from Recep Tayyip Erdogan University) for performing all the optical measurements of the study.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Yılmaz, S., Polat, İ., Atasoy, Y. et al. Structural, morphological, optical and electrical evolution of spray deposited ZnO rods co-doped with indium and sulphur atoms. J Mater Sci: Mater Electron 25, 1810–1816 (2014). https://doi.org/10.1007/s10854-014-1803-8
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10854-014-1803-8