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Structural, optical, and electrical evolution of sol–gel-immersion grown nickel oxide nanosheet array films on aluminium doping

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Abstract

We developed aluminium (Al)-doped nickel oxide (NiO) nanosheet arrays film on the indium-doped tin oxide (ITO) substrate via sol–gel immersion method using nickel nitrate hexahydrate and aluminium nitrate nonahydrate as precursor and dopant materials, respectively. The Al-doping concentrations were varied from 0 to 2 at.%. Uniform Al-doped NiO nanosheet array films were observed on the substrate; the denser and smaller size of the NiO nanosheets were obtained at higher Al-doping concentrations. The growth mechanism was proposed. The crystallinity of Al-doped NiO nanosheet deteriorated at higher doping concentration. Meanwhile, the crystallite size, lattice parameter, and interplanar spacing were reduced with the doping quantity. The compressive strain, tensile stress, dislocation density, and band gap of the Al-doped NiO upsurged at higher doping concentration. The current–voltage measurement results revealed that the resistivity increased after the doping process up to 2 at.%. The Raman spectra showed that the doped samples exhibit blue-shift and decreased intensity of the Raman peaks.

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Acknowledgement

The author (M.H. Mamat) would like to thank DST of Indian Government for the ASEAN-India Research & Training Fellowship Scheme (IMRC/AISTDF/R&D/P-1/2017). The conducted research was funded by Fundemental Research Grant Scheme (FRGS) (File No: FRGS/1/2018/TK04/UITM/02/23). The authors acknowledge the supports received from the Faculty of Electrical Engineering of UiTM and Institute of Research Management and Innovation (IRMI).

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Authors and Affiliations

  1. NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450, Shah Alam, Selangor, Malaysia

    M. H. Mamat, N. Parimon, A. S. Ismail & M. Rusop

  2. NANO-SciTech Centre (NST), Institute of Science (IOS), Universiti Teknologi MARA (UiTM), 40450, Shah Alam, Selangor, Malaysia

    M. H. Mamat & M. Rusop

  3. Department of Physics, B.S. Abdur Rahman Crescent Institute of Science & Technology, Vandalur, Chennai, 600 048, India

    I. B. Shameem Banu, S. Sathik Basha & G. V. Vijayaraghavan

  4. Faculty of Applied Sciences, Universiti Teknologi MARA (UiTM), 40450, Shah Alam, Selangor, Malaysia

    M. K. Yaakob

  5. Nanotechnology Research Centre, Faculty of Science and Mathematics, Universiti Pendidikan Sultan Idris (UPSI), 35900, Tanjung Malim, Perak, Malaysia

    A. B. Suriani

  6. Microelectronic and Nanotechnology – Shamsuddin Research Centre (MiNT-SRC), Faculty of Electrical and Electronic Engineering, Universiti Tun Hussein Onn Malaysia (UTHM), 86400, Batu Pahat, Johor, Malaysia

    M. K. Ahmad

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  1. M. H. Mamat
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Mamat, M.H., Parimon, N., Ismail, A.S. et al. Structural, optical, and electrical evolution of sol–gel-immersion grown nickel oxide nanosheet array films on aluminium doping. J Mater Sci: Mater Electron 30, 9916–9930 (2019). https://doi.org/10.1007/s10854-019-01330-z

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