Skip to main content
SpringerLink
Log in

Design of a Si-based Lattice-matched GeSn/SiGeSn Multi-quantum-well Laser

  • Published:
Journal of Russian Laser Research Aims and scope

Abstract

By calculating the heterojunction band alignment of GeSn/SiGeSn, a Ge0.9Sn0.1/Si0.14Ge0.71Sn0.15 multi-quantum-well laser was designed, where three Ge0.9Sn0.1 layers act as wells separated by three Si0.14Ge0.71Sn0.15 layers as barriers. The maximum TE gain reaches 7000 cm−1 at 0.5 eV, and the maximum TM gain reaches 5500 cm−1 at 0.52 eV. The modal gain of the Ge0.9Sn0.1/Si0.14Ge0.71Sn0.15 multi-quantum-well laser we proposed and designed can reach 100 cm−1 with a current density of 5 kA/cm2. The result indicates that it is possible to obtain a Si-based laser.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. S. Su, B. Cheng, C. Xue, et al., Opt. Express, 19, 6400 (2011).

    Article  ADS  Google Scholar 

  2. W. J. Yin, X. G. Gong, and S. H. Wei, Phys. Rev. B, 78, 161203 (2008).

    Article  ADS  Google Scholar 

  3. V. R. D’Costa, Y. Y. Fang, J. Tolle, et al., Phys. Rev. Lett., 102, 107403 (2009).

    Article  ADS  Google Scholar 

  4. J. Mathews, R. T. Beeler, J. Tolle, et al., Appl. Phys. Lett., 97, 221912 (2010).

    Article  ADS  Google Scholar 

  5. R. Chen, H. Lin, Y. Huo, et al., Appl. Phys. Lett., 99, 181125 (2011).

    Article  ADS  Google Scholar 

  6. M. Fukuda, T. Yamaha, T. Asano, et al., Mater. Sci. Semiconduct. Process., 70, 156 (2017).

    Article  Google Scholar 

  7. X. Sun, J. Liu, L. C. Kimerling, et al., Appl. Phys. Lett., 95, 011911 (2009).

    Article  ADS  Google Scholar 

  8. T. H. Cheng, C. Y. Ko, C. Y. Chen, et al., Appl. Phys. Lett., 96, 091105 (2010).

    Article  ADS  Google Scholar 

  9. S. Su, B. Cheng, C. Xue, et al., Opt. Express, 19, 6400 (2011).

    Article  ADS  Google Scholar 

  10. W. J. Yin, X. G. Gong, and S. H. Wei, Phys. Rev. B, 78, 161203 (2008).

    Article  ADS  Google Scholar 

  11. M. Jaros, Phys. Rev. B, 37, 7112 (1988).

    Article  ADS  Google Scholar 

  12. J. Ma, J. Zhang, X. Jia, et al., J. Russ. Laser Res., 38, 76 (2017).

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Key Laboratory of Ministry of Education for Wide Band Gap Semiconductor Materials and Devices School of Microelectronics, Xidian University, Xi’an, 710071, China

    Junqin Zhang, Jinge Ma & Yintang Yang

Authors
  1. Junqin Zhang
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Jinge Ma
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Yintang Yang
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Junqin Zhang.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Zhang, J., Ma, J. & Yang, Y. Design of a Si-based Lattice-matched GeSn/SiGeSn Multi-quantum-well Laser. J Russ Laser Res 41, 98–103 (2020). https://doi.org/10.1007/s10946-020-09853-1

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s10946-020-09853-1

Keywords

Search

Navigation