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Thermal Grafting of Benzaldehyde for Preparing Catalytically Active Silicon Surface Evaluated by Electrical Methods

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Abstract

Catalytically active C7H6O/p-Si/Al Schottky barrier surfaces were developed using the method of thermal grafting in a home-built reactor. The extendable organic molecule benzaldehyde with finite dipole moment was grafted by enthalpic cleavage of Si–H bond on p-Si (100) wafer. The current–voltage and capacitance–voltage characteristics were used to identify the optimal grafting of the molecule. The process temperature was varied from 353 to 403 K. The barrier height was found to tune from 0.36 to 0.52 eV with dopant density from 1085 × 1015 to 634 × 1015 cm−3. This change is attributed to reduction in surface inhomogeneity leading to rise in global potential barrier. Modified field emission theory was deployed effectively to extract the relevant parameters to evaluate the optimal grafting of aromatic aldehyde on the semiconductor surface.

Graphical Abstract

a ln(I)–V of Hg/C7H6O/p-Si/Al for Schottky barrier diode, and b 1/C2–voltage plot for Hg/C7H6O/p-Si/Al junction, for different grafting temperatures.

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Acknowledgements

Rajeev Joshi acknowledges Vision Group of Science and Technology (VGST), Bengaluru and University Grants Commission (UGC), Delhi and Central University of Karnataka for the financial support to carryout this work. R Mallikarjun acknowledges the University Grants Commission (UGC), Delhi for providing research fellowship.

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  1. Department of Physics, Central University of Karnataka, Kalaburagi, Karnataka, 585367, India

    R. Mallikarjun, Anum Mohammedi, Vaishnavi Kembhavi & Rajeev Joshi

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Mallikarjun, R., Mohammedi, A., Kembhavi, V. et al. Thermal Grafting of Benzaldehyde for Preparing Catalytically Active Silicon Surface Evaluated by Electrical Methods. Top Catal (2022). https://doi.org/10.1007/s11244-022-01582-w

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