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A study of residual characteristics in floating gate transistors

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Acknowledgements

This work was supported by National Natural Science Foundation of China (Grant No. 61376032) and Tianjin Science and Technology Project of China (Grant No. 15ZCZDGX00180).

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Authors and Affiliations

  1. School of Microelectronics, Tianjin University, Tianjin, 300072, China

    Jia Wang, Yiqiang Zhao, Ruishan Xin & Mao Ye

  2. Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, Tianjin University, Tianjin, 300072, China

    Jia Wang, Yiqiang Zhao, Ruishan Xin & Mao Ye

Authors
  1. Jia Wang
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  2. Yiqiang Zhao
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  3. Ruishan Xin
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  4. Mao Ye
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Correspondence to Mao Ye.

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Wang, J., Zhao, Y., Xin, R. et al. A study of residual characteristics in floating gate transistors. Sci. China Inf. Sci. 61, 069402 (2018). https://doi.org/10.1007/s11432-017-9145-2

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  • DOI: https://doi.org/10.1007/s11432-017-9145-2

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