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Deep insight into the voltage amplification effect from ferroelectric negative capacitance

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References

  1. Sze S M, Ng K K. Physics of Semiconductor Devices. Hoboken: John Wiley Sons, 2006

    Book  Google Scholar 

  2. Liu J Q, Zhao Y F, Wang L, et al. High energy proton and heavy ion induced single event transient in 65-nm CMOS technology. Sci China Inf Sci, 2017, 60: 120405

    Article  Google Scholar 

  3. Salahuddin S, Datta S. Use of negative capacitance to provide voltage amplification for low power nanoscale devices. Nano Lett, 2008, 8: 405–410

    Article  Google Scholar 

  4. Obradovic B, Rakshit T, Hatcher R, et al. Ferroelectric switching delay as cause of negative capacitance and the implications to NCFETs. In: Proceedings of IEEE Symposium on VLSI Technology, 2018. 51–52

  5. Wang H M, Yang M X, Huang Q Q, et al. New insights into the physical origin of negative capacitance and hysteresis in NCFETs. In: Proceedings of IEEE International Electron Devices Meeting (IEDM), 2018

  6. Xu Y N, Bi J S, Xu G B, et al. Total ionizing dose effects and annealing behaviors of HfO2-based MOS capacitor. Sci China Inf Sci, 2017, 60: 120401

    Article  Google Scholar 

  7. Böscke T S, Müller J, Bräuhaus D, et al. Ferroelectricity in hafnium oxide thin films. Appl Phys Lett, 2011, 99: 102903

    Article  Google Scholar 

  8. Ishibashi Y, Takagi Y. Note on ferroelectric domain switching. J Phys Soc Jpn, 1971, 31: 506–510

    Article  Google Scholar 

  9. Merz W J. Switching time in ferroelectric BaTiO3 and its dependence on crystal thickness. J Appl Phys, 1956, 27: 938–943

    Article  Google Scholar 

Download references

Acknowledgements

This work was partly supported by National Natural Science Foundation of China (NSFC) (Grant Nos. 61851401, 61421005, 61822401), National Science and Technology Major Project (Grant No. 2017ZX02 315001-004), and Programme of Introducing Talents of Discipline to Universities (111 Project) (Grant No. B18001).

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Authors and Affiliations

  1. Key Laboratory of Microelectronic Devices and Circuits (MOE), Institute of Microelectronics, Beijing, 100871, China

    Huimin Wang, Qianqian Huang, Mengxuan Yang, Xing Zhang & Ru Huang

Authors
  1. Huimin Wang
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  2. Qianqian Huang
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  3. Mengxuan Yang
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  4. Xing Zhang
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  5. Ru Huang
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Correspondence to Qianqian Huang or Ru Huang.

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Wang, H., Huang, Q., Yang, M. et al. Deep insight into the voltage amplification effect from ferroelectric negative capacitance. Sci. China Inf. Sci. 62, 89401 (2019). https://doi.org/10.1007/s11432-019-9885-7

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