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Single-electron pumping in a ZnO single-nanobelt quantum dot transistor

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Abstract

Diluted magnetic semiconductors (DMSs) have traditionally been employed to implement spin-based quantum computing and quantum information processing. However, their low Curie temperature is a major hurdle in their use in this field, which creates the necessity for wide bandgap DMSs operating at room temperature. In view of this, a single-electron transistor (SET) with a global back-gate was built using a wide bandgap ZnO nanobelt (NB). Clear Coulomb oscillations were observed at 4.2 K. The periodicity of the Coulomb diamonds indicates that the Coulomb oscillations arise from single quantum dots of uniform size, whereas quasi-periodic Coulomb diamonds correspond to the contribution of multi-dots present in the ZnO NB. By applying an AC signal to the global back-gate across a Coulomb peak with varying frequencies, single-electron pumping was observed; the increase in current was equal to the production of electron charge and frequency. The current accuracy of about 1% for both single- and double-electron pumping was achieved at a high frequency of 25 MHz. This accurate single-electron pumping makes the ZnO NB SET suitable for single-spin injection and detection, which has great potential for applications in quantum information technology.

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Authors and Affiliations

  1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China

    Hassan Ali, Jing Tang, Kai Peng, SiBai Sun, FeiLong Song, ShiYao Wu, ChenJiang Qian, Meng Wang & XiuLai Xu

  2. Laboratory of Quantum Engineering and Quantum Metrology, School of Physics and Astronomy, Sun Yat-Sen University (Zhuhai Campus), Zhuhai, 519082, China

    Jing Tang

  3. National Center for Nanoscience and Technology, Chinese Academy of Sciences, Beijing, 100190, China

    Attia Falak

  4. Department of Physics, University of the Punjab, Quaid-e-Azam Campus, Lahore, 54000, Pakistan

    Attia Falak

  5. Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin, 150025, China

    XiTian Zhang

  6. Department of Physics and Applied Mathematics, Pakistan Institute of Engineering and Applied Sciences, Islambad, 45650, Pakistan

    Hassan Ali & Muhammad Aftab Rafiq

  7. CAS Center for Excellence in Topological Quantum Computation, School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China

    XiuLai Xu

  8. Songshan Lake Materials Laboratory, Dongguan, 523808, China

    XiuLai Xu

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  1. Hassan Ali
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  2. Jing Tang
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  3. Kai Peng
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  5. Attia Falak
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  10. XiTian Zhang
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  11. Muhammad Aftab Rafiq
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Corresponding author

Correspondence to XiuLai Xu.

Additional information

This work was supported by the National Natural Science Foundation of China (Grant Nos. 51761145104, 11934019, 61675228, 11721404, and 11874419), the Strategic Priority Research Program, the Instrument De¬veloping Project and the Interdisciplinary Innovation Team of the Chinese Academy of Sciences (Grant Nos. XDB28000000, and YJKYYQ20180036), and the Key & D Program of Guangdong Province (Grant No. 2018B030329001).

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Ali, H., Tang, J., Peng, K. et al. Single-electron pumping in a ZnO single-nanobelt quantum dot transistor. Sci. China Phys. Mech. Astron. 63, 267811 (2020). https://doi.org/10.1007/s11433-019-1494-4

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