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Effect of Inverse Doped Surface Layer in Schottky Barrier Modification: A Numerical Study

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Abstract

Poisson’s equation and the drift–diffusion equations are used to simulate the current–voltage characteristics of a Schottky diode with an inverse doped surface layer. The potential inside the bulk semiconductor near the metal–semiconductor contact is estimated by simultaneously solving these equations, and then current as a function of bias through the Schottky diode is calculated. The Schottky diode parameters are extracted by fitting of simulated data to the thermionic emission diffusion equation. The simulation is carried out for various inverse layer thicknesses and doping concentrations. The obtained diode parameters are analyzed to study the effect of the inverse layer thickness and doping concentration on Schottky diode modification and its behavior at low temperatures. It is shown that an increase in the inverse layer thickness and doping concentration leads to Schottky barrier height enhancement and a change in the ideality factor. The temperature dependences of the Schottky barrier height and ideality factor are also studied.

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Authors and Affiliations

  1. Department of Physics, National Institute of Technology, Hamirpur, 177005, HP, India

    Subhash Chand & Priyanka Kaushal

  2. Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská Cesta 9, 841 04, Bratislava, Slovakia

    Jozef Osvald

Authors
  1. Subhash Chand
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  2. Priyanka Kaushal
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  3. Jozef Osvald
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Correspondence to Subhash Chand.

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Chand, S., Kaushal, P. & Osvald, J. Effect of Inverse Doped Surface Layer in Schottky Barrier Modification: A Numerical Study. J. Electron. Mater. 41, 3387–3392 (2012). https://doi.org/10.1007/s11664-012-2234-z

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  • DOI: https://doi.org/10.1007/s11664-012-2234-z

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