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Electronic structures and magneto-transport properties of co-based Heusler alloy based magneto-resistance junctions

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Abstract

A direct link between band structure and the ballistic transport property of full-Heusler alloys based Co2 YZ/Al/Co2 YZ trilayers (Y = Sc, Ti, V, Cr, Mn and Fe; Z = Al, Si and Ge) has been studied by firstprinciples calculations. It is found that the transport efficiency is determined primarily by three factors related to band structure: the shape of the band crossing Fermi energy E F, the distance d of the two intersection points of Co2 YZ and Al at E F, and the absolute maximum of the energy lying in the E F-crossing band, |Emax|. The transmission coefficient distribution patterns imply that the affected factor of magneto-resistance (MR) ratio is attributed to the band features around E F. In general, an intuitively illustrated diagram is proposed to clarify the relationship between the probability of electron transition and the current magnitude.

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References

  1. GALANAKIS I, MAVROPOULOS P. Spinpolarization and electronic properties of half-metallic Heusler alloys calculated from first principles [J]. Journal of Physics: Condensed Matter, 2007, 19(31): 315213.

    Google Scholar 

  2. JOHNSON M, SILSBEE R H. Thermodynamic analysis of interfacial transport and of the thermomagnetoelectric system [J]. Physical Review B, 1987, 35(10): 4959–4972.

    Article  Google Scholar 

  3. VAN SON P C, VAN KEMPEN H, WYDER P. Boundary resistance of the ferromagneticnonferromagnetic metal interface [J]. Physical Review Letters, 1987, 58(21): 2271–2273.

    Article  Google Scholar 

  4. BINASCH G, GRüNBERG P, SAURENBACH F, et al. Enhanced magnetoresistance in layered magnetic structures with antiferromagnetic interlayer exchange [J]. Physical Review B, 1989, 39(7): 4828–4830.

    Article  Google Scholar 

  5. YAKUSHIJI K, SAITO K, MITANI S, et al. Currentperpendicular-to-plane magnetoresistance in epitaxial Co2MnSi/Cr/Co2MnSi trilayers [J]. Applied Physics Letters, 2006, 88(22): 222504.

    Article  Google Scholar 

  6. KODAMA K, FURUBAYASHI T, SUKEGAWA H, et al. Current-perpendicular-to-plane giant magnetoresistance of a spin valve using Co2MnSi Heusler alloy electrodes [J]. Journal of Applied Physics, 2009, 105(7): 07E905.

    Article  Google Scholar 

  7. NAKATANI T M, MITANI S, FURUBAYASHI T, et al. Oscillatory antiferromagnetic interlayer exchange coupling in Co2Fe(Al0.5Si0.5)/Ag/Co2Fe(Al0.5Si0.5) films and its application to trilayer magnetoresistive sensor [J]. Applied Physics Letters, 2011, 99(18): 182505.

    Article  Google Scholar 

  8. VALET T, FERT A. Theory of the perpendicular magnetoresistance in magnetic multilayers [J]. Physical Review B, 1993, 48(10): 7099–71113.

    Article  Google Scholar 

  9. PRATT JR W P, LEE S F, SLAUGHTER J M, et al. Perpendicular giant magnetoresistances of Ag/Co multilayers [J]. Physical Review Letters, 1991, 66(23): 3060–3063.

    Article  Google Scholar 

  10. REILLYA C, PARKW SLATER R, et al. Perpendicular giant magnetoresistance of Co91Fe9/Cu exchangebiased spin-valves: Further evidence for a unified picture [J]. Journal of Magnetism and Magnetic Materials, 1999, 195(2): L269–L274.

    Article  Google Scholar 

  11. STEENWYK S D, HSU S Y, LOLOEE R, et al. Perpendicular-current exchange-biased spin-valve evidence for a short spin-diffusion length in permalloy [J]. Journal of Magnetism and Magnetic Materials, 1997, 170(1/2): L1–L6.

    Article  Google Scholar 

  12. FABIAN J, SARMA S D. Phonon-induced spin relaxation of conduction electrons in aluminum [J]. Physical Review Letters, 1999, 83(6): 1211–1214.

    Article  Google Scholar 

  13. BAI Z Q, CAI Y Q, SHEN L, et al. High-performance giant-magnetoresistance junctions based on the all-Heusler architecture with matched energy bands and Fermi surfaces [J]. Applied Physics Letters, 2013, 102(15): 152403.

    Article  Google Scholar 

  14. FENG Y, WU B, YUAN H K, et al. Structural, electronic and magnetic properties of Co2MnSi/Ag (100) interface [J]. Journal of Alloys and Compounds, 2015, 623: 29–35.

    Article  Google Scholar 

  15. KRESSE G, FURTHMüLLER J. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set [J]. Physical Review B, 1996, 54(16): 11169–11186.

    Article  Google Scholar 

  16. TAYLOR J, GUO H, WANG J. Ab initio modeling of quantum transport properties of molecular electronic devices [J]. Physical Review B, 2001, 63(24): 245407.

    Article  Google Scholar 

  17. WALDRON D, HANEY P, LARADE B, et al. Nonlinear spin current and magnetoresistance of molecular tunnel junctions [J]. Physical Review Letters, 2006, 96(16): 166804.

    Article  Google Scholar 

  18. LI Y, XIA J H, WANG G Z, et al. High-performance giant-magnetoresistance junction with B2-disordered Heusler alloy based Co2MnAl/Ag/Co2MnAl trilayer [J]. Journal of Applied Physics, 2015, 118(5): 053902.

    Article  Google Scholar 

  19. WURMEHL S, FECHER G H, KANDPAL H C, et al. Investigation of Co2FeSi: The Heusler compound with highest Curie temperature and magnetic moment [J]. Applied Physics Letters, 2006, 88(3): 032503.

    Article  Google Scholar 

  20. MAKINISTIAN L, FAIZ M M, PANGULURI R P, et al. On the half-metallicity of Co2FeSi Heusler alloy: Point-contact Andreev reflection spectroscopy and ab initio study [J]. Physical Review B, 2013, 87(22): 220402.

    Article  Google Scholar 

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Acknowledgments

The author acknowledges CHEN Hong and YUAN Hongkuan in Southwest University of China for their great help and fruitful discussions.

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Authors and Affiliations

  1. Department of Physics, Chongqing University of Arts and Sciences, Chongqing, 402160, China

    Yang Li  (李杨)

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  1. Yang Li  (李杨)
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Correspondence to Yang Li  (李杨).

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Foundation item: the Science and Technology Research Program of Chongqing Municipal Education Commission (No. KJ1711291)

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Li, Y. Electronic structures and magneto-transport properties of co-based Heusler alloy based magneto-resistance junctions. J. Shanghai Jiaotong Univ. (Sci.) 22, 530–535 (2017). https://doi.org/10.1007/s12204-017-1872-y

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  • DOI: https://doi.org/10.1007/s12204-017-1872-y

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