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Performance Evaluation of Transition Metal Dichalcogenides Based Steep Subthreshold Slope Tunnel Field Effect Transistor

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Abstract

In this paper, Transition Metal Dichalcogenides (TMDC) material based Tunnel Field Effect Transistor (TFET) has been studied by including coverage of a wide range of characteristics. Different analog/RF and linearity properties of TMDC materials Molybdenum disulfide (MoS2), Molybdenum Diselenide (MoSe2), Molybdenum Ditelluride (MoTe2), Tungsten disulfide (WS2) and Tungsten Diselenide (WSe2) have been analyzed. Developed device is compared with different previously proposed devices and much better characteristics are observed. Device structure used for simulation exhibit steep threshold slope. The lowest value of slope observed is 16.11 mV/dec for MoS2 and the highest value is obtained for MoSe2 as 21.6 mV/dec. Highest ION/IOFF ratio is obtained for MoS2(≈1013). TMDC materials exhibit properties which make them promising candidates to replace Silicon in the future.

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Authors and Affiliations

  1. Electronics Research Laboratory, Department of Electronics and communication, Faculty of Technology, University of Delhi, New Delhi, 110075, India

    Prateek Kumar

  2. Electronics Research Laboratory, Department of Electronics and communication, Netaji Subhas University of Technology (formerly NSIT), New Delhi, 110075, India

    Maneesha Gupta & Kunwar Singh

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  1. Prateek Kumar
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  2. Maneesha Gupta
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  3. Kunwar Singh
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Correspondence to Maneesha Gupta.

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Kumar, P., Gupta, M. & Singh, K. Performance Evaluation of Transition Metal Dichalcogenides Based Steep Subthreshold Slope Tunnel Field Effect Transistor. Silicon 12, 1857–1864 (2020). https://doi.org/10.1007/s12633-019-00285-4

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  • DOI: https://doi.org/10.1007/s12633-019-00285-4

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