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Comparison of electronic and thermoelectric properties of RhTiAs and RhTiSb in bulk and their [111] films

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Abstract

Mechanical, electronic, and thermoelectric properties of the RhTiZ (Z = As, Sb) compounds and their [111] thin films have been calculated based on the DFT framework. The RhTiZ (Z = As, Sb) bulk structures have stability in the mechanical and thermodynamic viewpoints, with 1.1 eV and 0.98 eV energy gaps, respectively. Their thermoelectric behaviors referred to the proper ZT and power factor at high temperatures suitable for power generators. Most of the RhTiZ (Z = As, Sb) [111] films have a half-metallic nature, while the γ-phase cases have magnetic moments than others. The γ-phase RhTiSb has a suitable figure of merit and power factor for cooling applications.

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Acknowledgment

This work was supported by the Physics Research Center at Islamic Azad University Ardabil Branch, Iran.

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Authors and Affiliations

  1. Department of Physics, Ardabil Branch, Islamic Azad University, Ardabil, Iran

    Mohammad Reza Azin-Sanjabod, Bashir Nedaee-Shakarab & Hossein Akbari

  2. Department of Physics, University of Mohaghegh Ardabili, P.O. Box 179, Ardabil, Iran

    Yashar Azizian-Kalandaragh

  3. Department of Engineering Sciences, Faculty of Advanced Technologies, Sabalan University of Advanced Technologies (SUAT), Namin, Iran

    Yashar Azizian-Kalandaragh

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  1. Mohammad Reza Azin-Sanjabod
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Correspondence to Bashir Nedaee-Shakarab.

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Azin-Sanjabod, M.R., Nedaee-Shakarab, B., Azizian-Kalandaragh, Y. et al. Comparison of electronic and thermoelectric properties of RhTiAs and RhTiSb in bulk and their [111] films. Int Nano Lett 11, 125–139 (2021). https://doi.org/10.1007/s40089-020-00325-7

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  • DOI: https://doi.org/10.1007/s40089-020-00325-7

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