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Investigation on the Relaxation Time Response of Metal Capped Amorphous Oxide Si–In–Zn–O Thin Film Transistors

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Abstract

Relaxation time of metal capped amorphous silicon-indium-zinc-oxide (a-SIZO) thin film transistors (TFTs) has been investigated. As increasing the length of metal capping layer, the electrical characteristics improved and threshold voltage (Vth) moved to negative direction from 1.4 to 0.6 V. The fabrication of thin film type inverter was conducted with the SIZO TFT of enhancement mode and 40 µm metal capped SIZO TFT of depletion mode. The voltage transfer curve showed inversion clearly. The relaxation time has been measured to confirm the electrical performance in the case of TFTs, indicating insignificant signal distortion. This result means it is possible to apply to integrated circuits or the next generation memory devices without any significant signal distortion.

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Authors and Affiliations

  1. Department of Electronics Engineering, Gachon University, Seongnam-Si, Gyeonggi-Do, 13120, Republic of Korea

    Sang Yeol Lee

  2. Gachon Advanced Institute of Semiconductor Technology, Gachon University, Seongnam-Si, Gyeonggi-Do, 13120, Republic of Korea

    Sang Yeol Lee

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Correspondence to Sang Yeol Lee.

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Lee, S.Y. Investigation on the Relaxation Time Response of Metal Capped Amorphous Oxide Si–In–Zn–O Thin Film Transistors. Trans. Electr. Electron. Mater. 22, 419–423 (2021). https://doi.org/10.1007/s42341-021-00335-y

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  • DOI: https://doi.org/10.1007/s42341-021-00335-y

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