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1.4 eV photoluminescence in chlorine-doped polycrystalline CdTe with a high density of defects

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Abstract

The 1.4 eV photoluminescence (PL) band in a polycrystalline CdTe : Cl with a high density of defects was studied as a function of the chlorine dopant concentration and temperature. For a material with a high density of defects this band has a smooth, non-symmetrical shape without any apparent phonon structure. The energy of the intensity maximum of the 1.4 eV band depends on the concentration of chlorine and varies from 1.389 to 1.408 eV. The temperature quenching of the PL intensity for all samples was measured and the activation energy (ET) was found. Minimum and maximum values of the ET were 0.10 and 0.20 eV, respectively. A configurational – coordinate model is proposed for the 1.4 eV PL band in which the excited state of the recombination centre lies within the conduction band. In this model the temperature quenching of the PL is pictured as being essentially due to an electronic transition from the excited state directly to the ground state (the internal mechanism).

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Authors and Affiliations

  1. Institute of Materials Technology, Tallinn Technical University, 5 Ehitajate tee, Tallinn, EE 0026, Estonia

    J KRUSTOK

  2. Optoelectronics Laboratory, Helsinki University of Technology, 1 Otakaari, SF-02150, Espoo, Finland

    K HJELT & H COLLAN

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  1. J KRUSTOK
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  2. J MADASSON
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  3. K HJELT
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  4. H COLLAN
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KRUSTOK, J., MADASSON, J., HJELT, K. et al. 1.4 eV photoluminescence in chlorine-doped polycrystalline CdTe with a high density of defects. Journal of Materials Science 32, 1545–1550 (1997). https://doi.org/10.1023/A:1018526622440

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