Abstract
A material in the form of a multilayer structure based on low-temperature LT-GaAs grown on (111)A-oriented substrates is proposed for fabrication of THz photoconductive antennas. These structures contain active LT-GaAs layers and doping acceptor GaAs:Si-based layers. At the optical pump power of 19 mW and the bias voltage of 30 V, a photoconductive antenna based on the optimized {LT-GaAs/GaAs:Si} (111)A structure emits THz pulses with the average power of 2.3 μW at the pulse repetition frequency of 80 MHz; the conversion efficiency is 1.2 × 10–4. It is shown that the dependence of the integral power of THz pulses of the antenna based on the {LT-GaAs/GaAs:Si} (111)A structure on the applied voltage is superlinear; the dependence of this parameter on the optical pump power is plotted as a curve with saturation. It is shown that the designed antennas have a practical application in THz spectroscopy of biological solutions.
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ACKNOWLEDGMENTS
We are grateful to M.M. Nazarov and O.P. Cherkasova for valuable advices and help in interpreting the results of THz spectroscopy of the solutions.
Funding
This study was supported by the Russian Foundation for Basic Research in the part concerning the preparation of epitaxial structures and PCAs (project no. 18-32-20207 mol-a-ved) and spectroscopy of protein aqueous solutions (project nos. 17-00-00275 (17-00-00270) and 19-52-55004 Kitai_a) and by the Ministry of Science and Higher Education of the Russian Federation within a State assignment for the Federal Scientific Research Centre “Crystallography and Photonics” of the Russian Academy of Sciences in the part concerning investigation of conversion of near-IR laser radiation of PCAs into THz radiation.
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Klochkov, A.N., Klimov, E.A., Solyankin, P.M. et al. THz Radiation of Photoconductive Antennas based on {LT-GaAa/GaAa:Si} Superlattice Structures. Opt. Spectrosc. 128, 1010–1017 (2020). https://doi.org/10.1134/S0030400X20070097
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DOI: https://doi.org/10.1134/S0030400X20070097