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Calculation of the concentration profile of copper in the TiN/CoSi2/Si system during thermal heating

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Abstract

The results of the calculation of concentration profiles of copper in the system Cu/TiN/CoSi@2/Si-substrate under thermal heating to 600°C are presented. Possible diffusion mechanisms of Cu in the TiN and CoSi2 films and bulk Si are considered.

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Authors and Affiliations

  1. Yaroslavl’ Branch, Institute of Physics and Technology, Russian Academy of Sciences, ul. Universitetskaya 21, Yaroslavl’, 150 007, Russia

    V. I. Rudakov & V. N. Gusev

Authors
  1. V. I. Rudakov
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  2. V. N. Gusev
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Corresponding author

Correspondence to V. I. Rudakov.

Additional information

Original Russian Text © V.I. Rudakov, V.N. Gusev, 2009, published in Mikroelektronika, 2009, Vol. 38, No. 4, pp. 309–314.

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Rudakov, V.I., Gusev, V.N. Calculation of the concentration profile of copper in the TiN/CoSi2/Si system during thermal heating. Russ Microelectron 38, 279–284 (2009). https://doi.org/10.1134/S1063739709040076

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  • DOI: https://doi.org/10.1134/S1063739709040076

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