Abstract
The effect of surface roughness of a silicon wafer on its temperature on heating by incoherent radiation is studied. The temperature-time diagrams of heating and cooling are obtained experimentally for double-side- and single-side-polished wafers at different arrangements of the rough surface with respect to the radiation source. The steady-state temperatures of such wafers under identical conditions of heating from 100 to 250°C are compared. It is established that the highest steady-state temperatures are common to the wafers presenting their rough side to the radiation source, the lowest steady-state temperatures to the double-side- polished wafers, and the intermediate temperatures to the wafers presenting their polished side to the radiation source. An optical model of the rough surface is suggested. In this model, the rough surface is represented by a negligibly thin damaged layer characterized by its own optical parameters. In the model, an optical parameter is introduced to characterize the degree of roughness of the illuminated surface. The dependence of the absorptivity of the wafer on this parameter and on the arrangement of the rough surface with respect to the radiation source is treated theoretically. The model provides a qualitative interpretation of the experimental data.
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References
Zogg, H., Alchalab, K., Zimin, D., and Kellerman, K., Two Dimensional Monolithic Lead Chalcogenide Infrared Sensor Arrays on Silicon Read-out Chips and Noise Mechanisms, IEEE Transactions on Electron Devices, 2003, vol. 50, no. 1, pp. 209–214.
Ugai, Ya. A., Samoilov, A.M., Sharov, M.K., Arsenov, A.V., and Buchnev, S.A., Growth of PbTe Films Doped with Gallium during the Growth on Si Substrates by the Modified Hot-Wall Technique, Poverkhnost. Rentgenovskie, Sinkhrotronnye, i Neitronnye Issledovaniya, 2002, no. 3, pp. 28–36.
Rudakov, V.I., Kurenya, A.L., Shornikov, A.A., and Gitlin, M.L., Deposition of the IV–VI Films by the Hot-Wall Method on Silicon Substrates 100 mm in Diameter, Mikroelectronika, 2009, vol. 38, no. 5, pp. 374–380 [Russ. Microelectronics (Engl. Transl.), vol. 38, no. 5, pp. 339–344].
Ravindra, N.M., Sopori, B., Gokce, O.N., Cheng, S.X., Shenoy, A., Jin, L., Abedrabbo, S., Chen, W., and Zhang, Y., Emissivity Measurements and Modeling of Silicon-Related Materials: an Overview, Intern. J. Thermophys., 2001, vol. 22, no. 5, pp. 1593–1611.
Sopori, B., Chen, W., Madjdpour, J., and Ravindra, N.M., Calculation of the Emissivity of Si Wafers, J. Electron. Mater., 1999, vol. 28, no. 12, pp. 1385–1389.
Magunov, A.N., Lazernaya termometriya tverdykh tel (Laser Thermometry of Solids), Moscow: Fizmatlit, 2002 [Laser Thermometry of Solids (Engl. Transl.), Cambridge: Cambridge Intern. Sci. Publ., 2003].
Toporets, A.S., Optika sherokhovatoy poverkhnosty (Optics of Rough Surfaces) Leningrad: Mashinostroenie, 1988.
Sopori, B., Chen, W., Abedrabbo, S., and Ravindra, N.M., Modeling Emissivity of Rough and Textured Silicon Wafers, J. Electron. Mater., 1998, vol. 27, no. 12, pp. 1341–1346.
Endelbrecht, J.A., A Technique for Obtaining the Infrared Reflectivity of Back Side-Damaged Silicon Samples, J. Electrochem. Soc., 1990, vol. 137, no. 1, pp. 300–302.
Timans, P.J., Emissivity of Silicon at Elevated Temperatures, J. Appl. Phys., 1993, vol. 74, no. 10, pp. 6353–6364.
Nulman, J., Antonio, S., and Blongian, W., Observation of Silicon Wafer Emissivity in Rapid Thermal Processing Chambers for Pyrometric Temperature Monitoring, Appl. Phys. Lett., 1990, vol. 56, no. 25, pp. 2513–2515.
Zvorykin, D. V. and Prokhorov, Yu. I., Primenenie luchistogo infrakrasnogo nagreva v elektronnoi promyshlennosti (Application of Radiant Infrared Heating in Electronic Engineering), Moscow: Energiya, 1980.
Xu, H., and Sturm, J.C., Emissivity of Rough Silicon Surfaces: Measurements and Calculations, Proc. Symp. Mater. Res. Soc., 1995, vol. 387, pp. 29–34.
Vandenabeele, P., and Maex, K., Influence of Temperature and Backside Roughness on the Emissivity of Si Wafers during Rapid Thermal Processing, J. Appl. Phys., 1992, vol. 72, no. 12, pp. 5867–5875.
Zhang, Z.M., Nano/Microscale Heat Transfer, New York: McGraw-Hill, 2007.
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Original Russian Text © V.I. Rudakov, V.V. Ovcharov, V.P. Prigara, 2010, published in Mikroelektronika, 2010, Vol. 39, No. 1, pp. 3–13
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Rudakov, V.I., Ovcharov, V.V. & Prigara, V.P. Effect of surface roughness on the temperature of a silicon wafer heated by incoherent radiation. Russ Microelectron 39, 1–11 (2010). https://doi.org/10.1134/S1063739710010014
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DOI: https://doi.org/10.1134/S1063739710010014