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Effect of pressure on the electronic structure of cuprates with strongly correlated electrons

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Abstract

For cuprates of the n and p types, the effect of pressure on the electronic structure of a CuO2 layer is studied. In the calculations performed, a generalized tight-binding method is used taking into account the influence of strong electronic correlations on the electronic structure of cuprates. The results obtained demonstrate the unusual effect of pressure on the nature of quasiparticle states at the top of the valence band in p-type cuprates. As the pressure increases, the hole states in these materials cease to be Zhang-Rice singlets and become combined singlet-triplet states.

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Original Russian Text © V.A. Gavrichkov, S.G. Ovchinnikov, G.V. Ul’m, 2007, published in Fizika Tverdogo Tela, 2007, Vol. 49, No. 4, pp. 580–583.

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Gavrichkov, V.A., Ovchinnikov, S.G. & Ul’m, G.V. Effect of pressure on the electronic structure of cuprates with strongly correlated electrons. Phys. Solid State 49, 608–612 (2007). https://doi.org/10.1134/S1063783407040026

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  • DOI: https://doi.org/10.1134/S1063783407040026

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