Abstract
This study presents the reliability of diamond-like carbon (DLC) ultrathin films fabricated by DC magnetron sputtering as the gate dielectric layer in metal–insulator–semiconductor (MIS) devices. Stress-induced leakage current (SILC) and time-dependent dielectric breakdown (TDDB) measurements were performed to determine the reliability of the devices. The MIS device with DLC film deposited at 1100-V bias exhibited little variation of SILC under different constant voltage stress times and had a long TDDB lifetime. The results indicate excellent reliability of DLC films used as gate dielectrics. Moreover, several soft breakdown events occurred during TDDB measuring. An extended percolation model was adopted for explanation of the current versus time characteristics.
Similar content being viewed by others
REFERENCES
S.-L. Tyan, H.-C. Tang, Z.-W. Wu, and T.-S. Mo, Mod. Phys. Lett. B 33, 1950423 (2019).
N. Basman, N. Aslan, O. Uzun, G. Cankaya, and U. Kolemen, Microelectron. Eng. 140, 18 (2015).
H. L. Chang, C. T. Chang, and C. T. Kuo, ECS J. Solid State Sci. 2, N217 (2013).
I.-K. Oh, B.-E. Park, S. Seo, B. C. Yeo, J. Tanskanen, H.-B.-R. Lee, W.-H. Kim, and H. Kim, J. Mater. Chem. C 6, 7367 (2018).
A. Hiraiwa, D. Matsumura, S. Okubo, and H. Kawarada, J. Appl. Phys. 121, 074502 (2017).
D. Q. Xiao, G. He, J. G. Lv, P. H. Wang, M. Liu, J. Gao, P. Jin, S. S. Jiang, W. D. Li, and Z. Q. Sun, J. Alloys Compd. 699, 415 (2017).
K. Shubham and R. U. Khan, J. Electron Dev. 17, 1439 (2013).
Yu. Yu. Illarionov, M. I. Vexler, V. V. Fedorov, S. M. Suturin, and N. S. Sokolov, J. Appl. Phys. 115, 223706 (2014).
B. Ricco, G. Gozzi, and M. Lanzoni, IEEE Trans. Electron. Dev. 45, 1554 (1998).
M. Kimura and T. Ohmi, J. Appl. Phys. 80, 6360 (1996).
D. Saada, J. Adler, and R. Kalish, Int. J. Mod. Phys. C 9, 61 (1998).
D. W. Han, S. M. Jeong, H. K. Baik, S. J. Lee, N. C. Yang, and D. H. Suh, Thin Solid Films 420, 190 (2002).
M. A. Tamor and W. C. Vassell, J. Appl. Phys. 76, 3823 (1994).
Y. Huang, Q. Wang, M. Wang, Z. Fei, and M. Li, Rare Met. 31, 198 (2012). https://doi.org/10.1007/s12598-012-0491-x
S. Prawer, K. W. Nugent, Y. Lifshitz, G. D. Lempert, E. Grossman, J. Kulik, I. Avigal, and R. Kalish, Diamond. Relat. Mater. 5, 433 (1996).
R. Degraeve, G. Groeseneken, R. Bellens, J. L. Ogier, M. Depas, P. J. Roussel, and H. E. Maes, IEEE Trans. Electron Dev. 45, 904 (1998).
Funding
This research partially received funding from the Headquarters of University Advancement at National Cheng Kung University (no. D108-F2204), which is financially supported by the Ministry of Education, Taiwan, ROC.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Tyan, SL., Tang, HC., Wu, ZW. et al. Reliability Characteristics of Diamond-Like Carbon as Gate Insulator for Metal–Insulator–Semiconductor Application. Phys. Solid State 62, 1845–1849 (2020). https://doi.org/10.1134/S1063783420100339
Received:
Revised:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063783420100339