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Quantum-Cascade Lasers with a Distributed Bragg Reflector Formed by Ion-Beam Etching

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Abstract

Single-mode lasing of quantum-cascade lasers with a distributed Bragg reflector formed by ion-beam etching in layers of the upper waveguide cladding is demonstrated. The active region is formed based on an In0.53Ga0.47As/Al0.48In0.52As solid-alloy heteropair with two-phonon depletion of the lower level in the cascade. Single-mode lasing at a temperature of 280 K corresponds to the emission wavelength of 7.74 μm, and the side-mode suppression ratio is 24 dB.

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Funding

This study was supported by the Russian Foundation for Basic Research, project no. 16-29-03289. D.A. Firsov and L.E. Vorob’ev acknowledge the partial support of the Ministry of Science and Higher Education of the Russian Federation, state contract no. 3.933.2017/4.6.

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Correspondence to A. V. Babichev.

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Translated by A. Sin’kov

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Babichev, A.V., Pashnev, D.A., Gladyshev, A.G. et al. Quantum-Cascade Lasers with a Distributed Bragg Reflector Formed by Ion-Beam Etching. Tech. Phys. Lett. 46, 312–315 (2020). https://doi.org/10.1134/S1063785020040033

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  • DOI: https://doi.org/10.1134/S1063785020040033

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