Abstract
It is shown that the photoresponse threshold and photosensitivity in a photoresistor material based on silicon doped with manganese atoms with the formation of the Mn4B nanoclusters can be changed by varying the electric field in the range of 0.1–30 V/cm. It has been found that, by changing the electric field, one can shift the photoresponse threshold of the samples at T = 100 K from 4.6 to 8 μm. The monochromatic photosensitivity at hν = 0.4 eV increases by 2.5 orders of magnitude as the field changes from 1 to 3 V/cm.
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Translated by E. Bondareva
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Bakhadirkhanov, M.K., Isamov, S.B., Ibodullaev, S.N. et al. Electric Field-Stimulated Photoconductivity in Silicon with Manganese Atom Nanoclusters in the Range of 3–8 μm. Tech. Phys. Lett. 46, 1192–1195 (2020). https://doi.org/10.1134/S1063785020120020
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DOI: https://doi.org/10.1134/S1063785020120020