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STUDY OF THE EFFECT OF THE BUFFER LAYER ON THE SUBSTRATE SURFACE AND THE PROCESS MEDIUM ON NANOCLUSTER FORMATION IN THE Si1 – xGex STRUCTURE

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Abstract

In this paper, we report the experimental results of the effect of the initial buffer layer on the substrate surface and the process medium on the possibility and features of the formation of Si1 – xGex nanoclusters (Si, Ge, and SiGe). We proposed a mechanism for the formation of silicon, germanium, and silicon–germanium nanoclusters on buffer layers of amorphous silicon, silicon nitride, and silicon, dysprosium, and yttrium oxides. The effect of the initial buffer layer on the substrate surface under the film deposition conditions of nanostructured silicon doped with germanium (NSS(Ge)) on the configuration, size, and surface concentration of nanocrystals is shown.

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Funding

This work was supported by the Ministry of Education of the Republic of Belarus, project no. 20-3160.

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Authors and Affiliations

  1. Belarusian State University of Informatics and Radioelectronics, 220013, Minsk, Belarus

    A. S. Strogova & A. A. Kovalevskii

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  1. A. S. Strogova
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  2. A. A. Kovalevskii
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Correspondence to A. S. Strogova.

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Translated by A. Ivanov

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Strogova, A.S., Kovalevskii, A.A. STUDY OF THE EFFECT OF THE BUFFER LAYER ON THE SUBSTRATE SURFACE AND THE PROCESS MEDIUM ON NANOCLUSTER FORMATION IN THE Si1 – xGex STRUCTURE. Nanotechnol Russia 14, 543–550 (2019). https://doi.org/10.1134/S1995078019060168

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