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Coupled Nonreactive Memristor Generators for Binary-Oscillator Networks

  • NANOELECTRONICS AND NEUROMORPHIC COMPUTING SYSTEMS
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Coupled nonreactive memristor generators (NMG) are considered as elements of binary-oscillator networks. In such systems, information is represented by binary streams and the exchange of binary signals between elements is facilitated. The principles of constructing NMGs for binary-oscillator networks are discussed. Analysis of the operation of the simplest networks based on them is carried out. The results of modeling coupled NMGs are presented.

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REFERENCES

  1. L. O. Chua, IEEE Trans. Circuit Theory 18, 507 (1971).

    Article  Google Scholar 

  2. D. B. Strukov, G. S. Snider, and D. R. Stewart, Nature (London, U.K.) 453, 80 (2008). https://doi.org/10.1038/nature06932

    Article  CAS  Google Scholar 

  3. S. H. Jo, T. Chang, I. Ebong, et al., Nano Lett. 10, 1297 (2010).

    Article  CAS  Google Scholar 

  4. C. Sung, H. Hwang, and I. K. Yoo, J. Appl. Phys. 124, 151903 (2018). https://doi.org/10.1063/1.5037835

    Article  CAS  Google Scholar 

  5. A. James, Memristor and Memristive Neural Networks (IntechOpen, London, 2018). https://doi.org/10.5772/66539

    Book  Google Scholar 

  6. I. N. Antonov, A. I. Belov, A. N. Mikhaylov, O. A. Morozov and P. E. Ovchinnikov, and J. Commun. Technol. Electron. 63, 950 (2018).

    Article  Google Scholar 

  7. V. A. Demin, A. V. Emelyanov, D. A. Lapkin, V. V. Erokhin, P. K. Kashkarov and M. V. Kovalchuk, Crystallogr. Rep. 61, 992 (2016).

    Article  CAS  Google Scholar 

  8. M. Itoh and L. O. Chua, Int. J. Bifurc. Chaos 18, 3183 (2008). https://doi.org/10.1142/S0218127408022354

    Article  Google Scholar 

  9. A. G. Radwan and M. E. Fouda, On the Mathematical Modeling of Memristor, Memcapacitor, and Meminductor (Springer Int., Cham, 2015). https://doi.org/10.1007/978-3-319-17491-4

    Book  Google Scholar 

  10. M. Zidan, H. Omran, C. Smith, et al., Int. J. Circ. Theor. Appl. 42, 1103 (2014). https://doi.org/10.1002/cta.1908

    Article  Google Scholar 

  11. E. Kyriakides and J. Georgiou, Int. J. Circ. Theor. Appl. 43, 1801 (2015).

    Article  Google Scholar 

  12. V. Rakitin and S. Rusakov, J. Commun. Technol. Electron. 62, 621 (2017).

    Article  Google Scholar 

  13. S. Datta, Proc. IEEE 107, 73 (2019).

    Article  Google Scholar 

  14. G. Csaba and W. Porod, arXiv: 1805.09056v1 [cs.ET] (2018).

  15. Y. Wang, G. Wang, Y. Shen, and H. Iu, Circuits Syst. Signal Process. 39, 3496 (2020).

    Article  Google Scholar 

  16. L. O. Chua, H. Kim, M. Sah, et al., Proc. IEEE 100, 2061 (2011).

    Google Scholar 

  17. J. Secco, M. Poggio, and F. Corinto, Int. J. Circ. Theor. Appl. 46, 1 (2018).

    Article  Google Scholar 

  18. T. Tsubone and T. Saito, IEICE Trans. Fundam., No. 8, 1619 (1999).

  19. Y. Yamashita and H. Torikai, IEEE Trans. Circuits Syst. II: Express Briefs 61, 54 (2014).

    Google Scholar 

  20. V. V. Rakitin and S. G. Rusakov, in Proceedings of the 2020 IEEE East-West Design and Test Symposium (EWDTS), Varna, Bulgaria, p. 269.

  21. G. N. Borisyuk, R. M. Borisyuk, Ya. B. Kazanovich, et al., “Mathematical results and applications,” Mat. Model. 4 (1), 3 (1992).

    Google Scholar 

  22. G. Burr, R. Shelby, A. Sebastian, et al., Adv. Phys.: X 2, 89 (2016).

    Google Scholar 

  23. W. Wang, Neural Comput., No. 8, 319 (1996).

  24. V. V. Rakitin and S. G. Rusakov, Nanoindustriya 3 (S5-3), 752 (2020).

  25. V. V. Rakitin and S. G. Rusakov, in Memristors, Ed. by Y. F. Chang (IntechOpen, London, 2021), p. 317. https://doi.org/10.5772/intechopen.97808

    Book  Google Scholar 

  26. V. V. Rakitin and S. G. Rusakov, Probl. Razrab. Persp. Mikro- Nanoelektron. Sist., No. 1, 79 (2016).

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Funding

The study was financially supported by the Russian Foundation for Basic Research (project no. 19-29-03012).

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Authors and Affiliations

  1. Institute for Design Problems in Microelectronics, Russian Academy of Sciences, Zelenograd, Russia

    V. V. Rakitin & S. G. Rusakov

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  1. V. V. Rakitin
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  2. S. G. Rusakov
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Correspondence to S. G. Rusakov.

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Rakitin, V.V., Rusakov, S.G. Coupled Nonreactive Memristor Generators for Binary-Oscillator Networks. Nanotechnol Russia 17, 883–889 (2022). https://doi.org/10.1134/S2635167621060197

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  • DOI: https://doi.org/10.1134/S2635167621060197

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