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Crystallization of Amorphous Si In Al/Si Multilayers

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Abstract

The crystallization of amorphous Si in a Al/Si multilayer (with a modulation length of about 120Å) was investigated using transmission electron microscopy, differential scanning calorimetry and X-ray diffraction. Amorphous Si was found to crystallize at about 175 °C with the heat of reaction of 11±2(kJ/mol). Al grains grow prior to the nucleation of crystalline Si. The crystalline Si was found to nucleate within the grown Al layers. The incipient crystalline Si initially grows within the Al layer and then spreads through the amorphous Si and other Al layers. Because of extensive intermixing, the original layered structure is destroyed. The Al(111) texture is also enhanced.

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Acknowledgements

We would like to thank Professor Robert Waymouth and Ms.Anne-Lise Mogstad, Department of Chemistry, Stanford University, for permission to use the Perkin-Elmer DSC-7 and for help during the operation. This work is supported by the National Science Foundation (Grant number DMR 8902232).

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Authors and Affiliations

  1. Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA

    Toyohiko J. Konno & Robert Sinclair

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  1. Toyohiko J. Konno
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  2. Robert Sinclair
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Konno, T.J., Sinclair, R. Crystallization of Amorphous Si In Al/Si Multilayers. MRS Online Proceedings Library 230, 189–194 (1992). https://doi.org/10.1557/PROC-230-189

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