Abstract
Hydrogen terminated diamond field effect transistors (FET) of 50nm gate length have been fabricated, their DC operation characterised and their physical and chemical structure inspected by Transmission Electron Microscopy (TEM) and Electron Energy Loss Spectroscopy (EELS). DC characterisation of devices demonstrated pinch-off of the source-drain current can be maintained by the 50nm gate under low bias conditions. At larger bias, off-state output conductance increases, demonstrating most likely the onset of short-channel effects at this reduced gate length.
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Moran, D.A., MacLaren, D.A., Porro, S. et al. 50nm Gate-Length Hydrogen Terminated Diamond Field Effect Transistors – Characterization and Inspection of Operation.. MRS Online Proceedings Library 1282, 1601 (2010). https://doi.org/10.1557/opl.2011.455
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DOI: https://doi.org/10.1557/opl.2011.455