Abstract
A new method of theoretical investigation of the interdiffusion effect on electron states in quantum dots is proposed. The main point of the method is the replacement of the “veritable” confining potential formed due to the diffusion by a model potential, for which the Schrödinger equation solutions and the energy spectrum are known. In the framework of the proposed method we calculate the positions of edges of the conduction and heavy hole bands and the absorption coefficient of interband transitions depending on the diffusion length in spherical InxGa1−x As/AlyGa1−y As quantum dots, using the Wood-Saxon potential as a model one.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
Malik, S., Roberts, C., et al., Appl. Phys. Lett., 1997, vol. 71, p. 1987.
Schlesinger, T.E. and Kuech, T., Appl. Phys. Lett., 1986, vol. 49, p. 519.
Gunawan, O., Djie, H.S., and Ooi, B.S., Phys. Rev. B, 2005, vol. 71, p. 205319.
Gillin, W.P., Dunstan, D.J., Homewood, K.P., Howard, L.K., and Sealy, B.J., J. Appl. Phys., 1993, vol. 73, p. 3782.
Leon, R., Fafard, S., Piva, P.G., Ruvimov, S., and Liliental-Weber, Z., Phys. Rev. B, 1998, vol. 58, p. R4262.
Lobo, C., Leon, R., Fafard, S., and Piva, P.G., Appl. Phys. Lett., 1998, vol. 72, p. 2850.
Yalin Ji, Wei Lu, Guibin Chen, Xiaoshuang Chen, and Qing Wangjuvydot, J. Appl. Phys., 2003, vol. 93, p. 1208.
Wang, X.C. et al., J. Appl. Phys., 1999, vol. 86, p. 2687.
Fafard, S. and Allen, C.N., Appl. Phys. Lett., 1999, vol. 75, p. 2374.
Xu, S.J. and Wang, X.C., Appl. Phys. Lett., 1998, vol. 72, p. 3335.
Takeuchi, K. and Moldauer, P.A., Phys. Lett. B, 1969, vol. 28, p. 384.
Leon, R., Williams, D.R.M., Krueger, J., Weber, E.R., and Melloch, M.R., Phys. Rev. B, 1997, vol. 56, p. R4336.
Lojewski, Z., Nerlo-Pomorska, B., Pomorski, K., and Dudek, J., Phys. Rev. C, 1995, vol. 51, p. 601.
Abdullah, M.N.A., Das, S.K., and Tariq, A.S.B., J. Phys. G, 2003, vol. 29, p. 1259.
Bespalova, O.V., Romanovsky, E.A., and Spasskaya, T.I., J. Phys. G, 2003, vol. 29, p. 1193.
Barker, J.A. and O’Railly, E.P., Phys. E, 1999, vol. 4, p. 231.
Adachi, S., Appl. Phys., 1985, vol. 53, p. R1.
Flügge, S., Practical Quantum Mechanics, vol. 1, Moscow: Mir, 1974.
Basu, P.K., Theory of Optical Processes in Semiconductors, Bulk and Microstructures, Oxford: Clarendon Press, 1997.
Author information
Authors and Affiliations
Additional information
Original Russian Text © V.N. Mughnetsyan, A.A. Kirakosyan, 2007, published in Izvestiya NAN Armenii, Fizika, 2007, Vol. 42, No. 2, pp. 83–91.
About this article
Cite this article
Mughnetsyan, V.N., Kirakosyan, A.A. Effect of In and Al interdiffusion on electron states and light absorption in InxGa1−x As/AlyGa1−y As quantum dots. J. Contemp. Phys. 42, 55–61 (2007). https://doi.org/10.3103/S1068337207020038
Received:
Issue Date:
DOI: https://doi.org/10.3103/S1068337207020038