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Encapsulated Silicene Field-Effect Transistors

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Silicene

Part of the book series: NanoScience and Technology ((NANO))

Abstract

Besides theoretical studies, experimental investigations on silicene began with the synthesis of silicene on ceramic or metallic catalyst substrates such as ZrB2, Ir and Ag. Among various reported methods, the epitaxial growth of silicene sheet atop Ag(111) has received increasing attention and a derivative approach of using evaporated Ag(111) film as catalyst on a cleavable substrate will be specifically discussed in this Chapter for the ease of following device studies. Despite these research progresses in silicene synthesis, there is a lack of experimental investigation on silicene devices. One of the most key challenges is the material preservation during device fabrication and measurement process. This chapter will summarize recent understanding and progress in air-stability of silicene and viable device fabrication choices, to enable the debut of the first silicene field-effect transistor. A survey will be conducted on experimental probing of electrical properties of silicene via scanning tunneling microscopy, angle-resolved photoemission spectroscopy, and experimental transport measurement on field-effect transistors. These results not only provide experimental feedback to existing theoretical studies, but also encourages further interest in novel device concepts and prospects of silicene and other emerging 2D materials like germanene, stanene and phosphorene.

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  1. Li Tao

    Present address: School of Materials Science and Engineering, Southeast University, Nanjing, 211189, China

Authors and Affiliations

  1. Microelectronics Research Centre, The University of Texas at Austin, Austin, TX, 78758, USA

    Li Tao & Deji Akinwande

  2. Laboratorio MDM, IMM-CNR, Via Camillo Olivetti 2, Agrate Brianza, 20864, Catania, Italy

    Eugenio Cinquanta, Carlo Grazianetti & Alessandro Molle

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  1. Li Tao
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  2. Eugenio Cinquanta
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Correspondence to Deji Akinwande .

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  1. Institut für Physik, Technische Universität Chemnitz, Chemnitz, Germany

    Patrick Vogt

  2. CNRS, PIIM UMR 7345, Aix-Marseille University, Marseille, France

    Guy Le Lay

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Tao, L., Cinquanta, E., Grazianetti, C., Molle, A., Akinwande, D. (2018). Encapsulated Silicene Field-Effect Transistors. In: Vogt, P., Le Lay, G. (eds) Silicene. NanoScience and Technology. Springer, Cham. https://doi.org/10.1007/978-3-319-99964-7_12

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