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Dynamics of Excitons and Exciton Complexes in Wide-Gap Semiconductors

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Optics of Semiconductors and Their Nanostructures

Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 146))

Abstract

Optical properties of direct-gap semiconductors are, at least for moderate excitation densities and temperatures, strongly governed by excitonic processes, i.e., in the most simple case by the formation and decay of the two-particle system exciton composed of each one conduction-band electron and valence-band hole bound by their mutual Coulomb attraction. However, even unbound electrons and holes in the bands experience Coulomb correlation leading to the so-called Coulomb enhancement of the band-edge absorption exceeding the simple square-root absorption deduced from the treatment of optical excitation in the single-particle approach for which Coulomb interaction of excitations in the bands is neglected.

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Authors
  1. Jürgen Gutowski
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  2. Hans-Georg Breunig
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  3. Tobias Voss
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  1. Institut für Angewandte Physik and DFG-Center for Functional Nanostructures, Universität Karlsruhe (TH), 76128, Karlsruhe, Germany

    Heinz Kalt  & Michael Hetterich  & 

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Gutowski, J., Breunig, HG., Voss, T. (2004). Dynamics of Excitons and Exciton Complexes in Wide-Gap Semiconductors. In: Kalt, H., Hetterich, M. (eds) Optics of Semiconductors and Their Nanostructures. Springer Series in Solid-State Sciences, vol 146. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-09115-9_6

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  • DOI: https://doi.org/10.1007/978-3-662-09115-9_6

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