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Electronic Quantum Devices

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Physical Models of Semiconductor Quantum Devices

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Abstract

Starting with the introduction of electron transport in conventional p−n junction and field-effect transistor, we first discuss semiclassical versus quantum mechanical considerations about carrier transport in solids after which we focus on the tunneling of an electron wave through a potential barrier in resonant tunneling diode and heterostructure barrier varactor. Quantum mechanical engineering of nano-scale transistors, including high-electron-mobility transistor and single-electron transistor, are then presented for higher carrier mobility and better current-voltage control.

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  1. Royal Institute of Technology, Stockholm, Sweden

    Ying Fu

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Fu, Y. (2014). Electronic Quantum Devices. In: Physical Models of Semiconductor Quantum Devices. Springer, Dordrecht. https://doi.org/10.1007/978-94-007-7174-1_4

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