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Oxygen Impurity in Crystalline Silicon

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Handbook of Photovoltaic Silicon

Abstract

Oxygen belongs to the most important impurities in many types of solar silicon. Interstitial oxygen is already incorporated in a supersaturated state during crystal growth. Subsequent thermal treatment during solar cell manufacturing leads to its precipitation which degrades the lifetime of minority carriers in solar cell material and also the solar cell efficiency. Oxide precipitate nuclei are formed already during crystal cooling. A special form of oxygen precipitation is the generation of thermal donors which enhance the free carrier concentration and in this way degrade the lifetime of minority carriers. Controlling of oxygen precipitation for optimization of solar cell efficiency involves controlling of all important factors affecting the nucleation and growth of oxygen-related defects. Therefore, this chapter deals with the basic understanding of oxygen precipitation and thermal donor formation, its characterization and measurement, and its impact on solar cell material and solar cell performance. The interaction of intrinsic point defects, light elements, and dopants with oxygen and its impact on precipitation is also discussed.

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References

  • D. Ǻberg, B.G. Svensson, T. Hallberg, J.L. Lindström, Phys. Rev. B 58, 12944 (1998)

    Article  Google Scholar 

  • V. Akhmetov, G. Kissinger, W. von Ammon, Appl. Phys. Lett. 94, 092105 (2009)

    Article  CAS  Google Scholar 

  • L. Arnberg, M. Di Sabatino, E.J. Øvrelid, J. Cryst. Growth 360, 56 (2012)

    Article  CAS  Google Scholar 

  • R. Becker, W. Döring, Ann. Phys. 24, 719 (1935)

    Article  CAS  Google Scholar 

  • J.L. Benton, L.C. Kimerling, M. Stavola, Phy. B 116, 271 (1983)

    Article  CAS  Google Scholar 

  • S. Binetti, S. Pizzini, E. Leoni, R. Somaschini, A. Castaldini, A. Cavallini, J. Appl. Phys. 92, 2437 (2002)

    Article  CAS  Google Scholar 

  • S. Binetti, A. Le Donne, A. Sassella, Sol. Energy Mater. Sol. Cells 130, 696 (2014)

    Article  CAS  Google Scholar 

  • A. Borghesi, A. Piaggi, A. Sassella, A. Stella, B. Pivac, Phys. Rev. B 46, 4123 (1992)

    Article  CAS  Google Scholar 

  • A. Borghesi, B. Pivac, A. Sassella, A. Stella, J. Appl. Phys. 77, 4169 (1995)

    Article  CAS  Google Scholar 

  • A. Borghesi, A. Sassela, P. Geranzani, M. Porrini, B. Pivac, Mater. Sci. Eng. B 73, 145 (2000)

    Article  Google Scholar 

  • S. Cadeo, S. Pizzini, M. Acciarri, A. Cavallini, Mat. Sci. Semicond. Proc. 2, 57 (1999)

    Article  CAS  Google Scholar 

  • V. Cazcarra, P. Zunino, J. Appl. Phys. 51, 4206 (1980)

    Article  CAS  Google Scholar 

  • L. Chen, X. Yu, P. Chen, P. Wang, X. Gu, J. Lu, D. Yang, Sol. Energy Mater. Sol. Cells 95, 3148 (2011)

    Article  CAS  Google Scholar 

  • M. Claybourn, R.C. Newman, Appl. Phys. Lett. 52, 2139 (1988)

    Article  CAS  Google Scholar 

  • J. Coutinho, R. Jones, L.I. Murin, V.P. Markevich, J.L. Lindström, S. Öberg, P.R. Briddon, Phys. Rev. Lett. 87, 235501 (2001)

    Article  CAS  Google Scholar 

  • R. Falster, M. Cornara, D. Gambaro, M. Olmo, M. Pagani, Solid State Phenom. 57–58, 123 (1997a)

    Article  Google Scholar 

  • R. Falster, M. Pagani, D. Gambaro, M. Cornara, M. Olmo, G. Ferrero, P. Pichler, M. Jacob, Solid State Phenom. 57–58, 129 (1997b)

    Article  Google Scholar 

  • C.S. Fuller, R.A. Logan, J. Appl. Phys. 28, 1427 (1957)

    Article  CAS  Google Scholar 

  • J. Furukawa, H. Furuya, Jpn. J. Appl. Phys. 34, L156 (1995)

    Article  CAS  Google Scholar 

  • G. Gaspar, G. Coletti, M. Juel, S. Würzner, R. Søndenå, M. Di Sabatino, L. Arnberg, E.J. Øvrelid, Sol. Energy Mater. Sol. Cells 153, 31 (2016)

    Article  CAS  Google Scholar 

  • W. Götz, G. Pensl, W. Zulehner, Phys. Rev. B 46, 4312 (1992)

    Article  Google Scholar 

  • T. Hallberg, J.L. Lindström, J. Appl. Phys. 72, 5130 (1992)

    Article  CAS  Google Scholar 

  • C. Häßler, H.-U. Höfs, W. Koch, G. Stollwerck, A. Müller, D. Karg, G. Pensl, Mat. Sci. Eng. B71, 39 (2000)

    Article  Google Scholar 

  • S.M. Hu, J. Appl. Phys. 51, 5945 (1980)

    Article  CAS  Google Scholar 

  • Y. Hu, H. Schøn, E.J. Øvrelid, Ø. Nielsen, L. Arnberg, AIP Adv. 2, 032169 (2012)

    Article  CAS  Google Scholar 

  • J.M. Hwang, D. Schroder, J. Appl. Phys. 59, 2476 (1986)

    Article  CAS  Google Scholar 

  • K. Kaneko, K. Nakagawa, T. Onizuka, K. Sasatani, N. Kubo, M. Kida, in Proc. 16th Workshop on Crystalline Silicon Solar Cells and Modules, ed. by B. L. Sopori, NREL, (Denver, 2006), p. 2

    Google Scholar 

  • D. Karg, G. Pensl, M. Schulz, C. Hässler, W. Koch, Phys. Stat. Sol. (B) 222, 379 (2000)

    Article  CAS  Google Scholar 

  • D. Karg, G. Pensl, M. Schulz, in Proc. 3rd World Conf. on Photovoltaic Energy Conversion, WCPEC-3 Organizing Committee, (Osaka, 2003), p. 1112–1115

    Google Scholar 

  • D. Karg, H. Charifi, G. Pensl, M. Schulz, G. Hahn, in 19th Europ. Photovoltaic Solar Energy Conf.: Proc. of the Int. Conf. held in Paris, France, June 7–11 2004, vol 1, ed. by H. Winfried (WIP, München [u.a.], 2004), pp. 709–712. ISBN 3-936338-14-0

    Google Scholar 

  • G. Kato, M. Tajima, F. Okayama, S. Tokumaru, R. Sato, H. Toyota, A. Ogura, Acta Phys. Pol. A 125, 1010 (2014)

    Article  CAS  Google Scholar 

  • K.F. Kelton, R. Falster, D. Gambaro, M. Olmo, M. Cornara, P.F. Wei, J. Appl. Phys. 85, 8097 (1999)

    Article  CAS  Google Scholar 

  • K. Kinoshita, T. Kojima, K. Onishi, Y. Ohshita, A. Ogura, Jpn. J. Appl. Phys. 58, SBBF02 (2019)

    Article  Google Scholar 

  • G. Kissinger, in Defects and Impurities in Silicon Materials, Lecture Notes in Physics, ed. by Y. Yoshida, G. Langouche, vol. 916, (Springer, Japan, 2015), pp. 273–341

    Chapter  Google Scholar 

  • G. Kissinger, J. Dabrowski, J. Electrochem. Soc. 155, H448 (2008)

    Article  CAS  Google Scholar 

  • G. Kissinger, D. Gräf, U. Lambert, H. Richter, J. Electrochem. Soc. 144, 1447 (1997)

    Article  CAS  Google Scholar 

  • G. Kissinger, J. Dabrowski, A. Sattler, C. Seuring, T. Müller, H. Richter, W. von Ammon, J. Electrochem. Soc. 154, H454 (2007)

    Article  CAS  Google Scholar 

  • G. Kissinger, D. Kot, J. Dabrowski, V. Akhmetov, A. Sattler, W. von Ammon, ECS Trans. 16(6), 97 (2008a)

    Article  CAS  Google Scholar 

  • G. Kissinger, J. Dabrowski, A. Sattler, T. Müller, W. von Ammon, Solid State Phenom. 131–133, 293 (2008b)

    Google Scholar 

  • G. Kissinger, J. Dabrowski, V. Akhmetov, A. Sattler, D. Kot, W. von Ammon, Solis State Phenom. 156–158, 211 (2010)

    Google Scholar 

  • G. Kissinger, J. Dabrowski, D. Kot, V. Akhmetov, A. Sattler, W. von Ammon, J. Electrochem. Soc. 158, H343 (2011)

    Article  CAS  Google Scholar 

  • G. Kissinger, D. Kot, J. Dabrowski, T. Grabolla, T. Müller, A. Sattler, Phys. Status Solidi A 214, 1700236 (2017)

    Article  CAS  Google Scholar 

  • D. Kot, T. Mchedlidze, G. Kissinger, W. von Ammon, ECS J. Solid State Sci. Technol. 2, P9 (2013)

    Article  CAS  Google Scholar 

  • D. Kot, G. Kissinger, M.A. Schubert, A. Sattler, ECS J. Solid State Sci. Technol. 3(11), P370 (2014)

    Article  CAS  Google Scholar 

  • D. Kot, G. Kissinger, M.A. Schubert, S. Marschmeyer, G. Schwalb, A. Sattler, Phys. Stat. Sol. (C) 14, 1700161 (2017)

    Google Scholar 

  • D. Kot, G. Kissinger, J. Dabrowski, A. Sattler, ECS J. Solid State Sci. Technol. 7, P707 (2018)

    Article  CAS  Google Scholar 

  • F. Kroupa, Czechoslov. J. Phys. 10B, 284 (1960)

    Article  Google Scholar 

  • A. Le Donne, S. Binetti, V. Folegatti, G. Coletti, Appl. Phys. Lett. 109, 033907 (2016)

    Article  CAS  Google Scholar 

  • S.-T. Lee, P. Fellinger, S. Chen, J. Appl. Phys. 63, 1924 (1988)

    Article  CAS  Google Scholar 

  • J. Lu, G. Rozgonyi, J. Rand, R. Jonczyk, J. Cryst. Growth 269, 599 (2004)

    Article  CAS  Google Scholar 

  • V.P. Markevich, M. Vaqueiro-Contreras, S.B. Lastovskii, L.I. Murin, M.P. Halsall, A.R. Peaker, J. Appl. Phys. 124, 225703 (2018)

    Article  CAS  Google Scholar 

  • S.A. McQuaid, B.K. Johnson, D. Gambaro, R. Falster, M.J. Ashwin, J.H. Tucker, J. Appl. Phys. 86, 1878 (1999)

    Article  CAS  Google Scholar 

  • J.C. Mikkelsen Jr., Mater. Res. Soc. Symp. Proc. 59, 19 (1986)

    Article  CAS  Google Scholar 

  • M. Miyagi, K. Wada, J. Osaka, N. Inoue, Appl. Phys. Lett. 40, 719 (1982)

    Article  CAS  Google Scholar 

  • Y. Miyamura, H. Harada, K. Jiptner, S. Nakano, B. Gao, K. Kakimoto, K. Nakamura, Y. Ohshita, A. Ogura, S. Sugawara, T. Sekiguchi, Appl. Phys. Express 8, 062301 (2015)

    Article  CAS  Google Scholar 

  • Y. Miyamura, H. Harada, S. Nakano, S. Nishizawa, K. Kakimoto, J. Cryst. Growth 489, 1 (2018)

    Article  CAS  Google Scholar 

  • H.J. Möller, L. Long, M. Werner, D. Yang, Phys. Stat. Sol. (A) 171, 175 (1999)

    Article  Google Scholar 

  • P.M. Mooney, L.J. Cheng, M. Süli, J.D. Gerson, J.W. Corbett, Phys. Rev. B 15, 3836 (1977)

    Article  CAS  Google Scholar 

  • Y. Murakami, Y. Satoh, H. Furuja, T. Shingyouji, J. Appl. Phys. 84, 3175 (1998)

    Article  CAS  Google Scholar 

  • L.I. Murin, J.L. Lindström, B.G. Svensson, V.P. Markevich, A.R. Peaker, C.A. Londos, Solid State Phenom. 108–109, 267 (2005)

    Article  Google Scholar 

  • J.D. Murphy, P.R. Wilshaw, B.C. Pygall, S. Senkader, J. Appl. Phys. 100, 103531 (2006)

    Article  CAS  Google Scholar 

  • J.D. Murphy, K. Bothe, M. Olmo, V.V. Voronkov, R.J. Falster, J. Appl. Phys. 110, 053713 (2011)

    Article  CAS  Google Scholar 

  • J.D. Murphy, K. Bothe, V.V. Voronkov, R.J. Falster, Appl. Phys. Lett. 102, 042105 (2013)

    Article  CAS  Google Scholar 

  • J.D. Murphy, R.E. McGuire, K. Bothe, V.V. Voronkov, R.J. Falster, Sol. Energy Mater. Sol. Cells 120, 402 (2014)

    Article  CAS  Google Scholar 

  • J.D. Murphy, M. Al-Amin, K. Bothe, M. Olmo, V.V. Voronkov, R.J. Falster, J. Appl. Phys. 118, 215706 (2015)

    Article  CAS  Google Scholar 

  • F.R.N. Nabarro, H.H. Wills, Proc. Roy. Soc. A 175, 519 (1940)

    CAS  Google Scholar 

  • K. Nakai, Y. Inoue, H. Yokota, A. Ikari, J. Takahashi, A. Tachikawa, K. Kitahara, Y. Ohta, W. Ohashi, J. Appl. Phys. 89, 4301 (2001)

    Article  CAS  Google Scholar 

  • R.C. Newman, J.H. Tucker, A.R. Brown, S.A. McQuaid, J. Appl. Phys. 70, 3061 (1991)

    Article  CAS  Google Scholar 

  • H. Ono, T. Ishizuka, C. Kato, K. Arafune, Y. Ohshita, A. Ogura, Jpn. J. Appl. Phys. 49, 110202 (2010)

    Article  CAS  Google Scholar 

  • G. Pensl, M. Schulz, K. Hölzlein, W. Bergholz, J.L. Hutchison, Appl. Phys. A 48, 49 (1989)

    Article  Google Scholar 

  • M. Pesola, Y.J. Lee, J. von Boehm, M. Kaukonen, R.M. Nieminen, Phys. Rev. Lett. 84, 5343 (2000)

    Article  CAS  Google Scholar 

  • B. Pivac, A. Sassella, A. Borghesi, Mater. Sci. Eng. B 36, 53 (1996)

    Article  Google Scholar 

  • S. Pizzini, M. Acciarri, E. Leoni, A. Le Donne, Phys. Stat. Sol. (B) 222, 141 (2000)

    Article  CAS  Google Scholar 

  • V. Quemener, B. Raeissi, F. Herklotz, L.I. Murin, E.V. Monakhov, B.G. Svensson, Phys. Stat. Sol. B 251, 2197 (2014)

    Article  CAS  Google Scholar 

  • V. Quemener, B. Raeissi, F. Herklotz, L.I. Murin, E.V. Monakhov, B.G. Svensson, J. Appl. Phys. 118, 135703 (2015)

    Article  CAS  Google Scholar 

  • M. Ramamoorthy, S.T. Pantelides, Solid State Commun. 106, 243 (1998)

    Article  CAS  Google Scholar 

  • A. Richter, S.W. Glunz, F. Werner, J. Schmidt, Phys. Rev. B 86, 165202 (2012)

    Article  CAS  Google Scholar 

  • A. Sassella, A. Borghesi, P. Garanzani, G. Borionetti, Appl. Phys. Lett. 75, 1131 (1999)

    Article  CAS  Google Scholar 

  • K. Schmalz, P. Gaworzewski, Phys. Stat. Sol. (A) 64, 151 (1981)

    Article  CAS  Google Scholar 

  • J. Schmidt, K. Bothe, Phys. Rev. B 69, 024107 (2004)

    Article  CAS  Google Scholar 

  • F. Shimura, Semicond. Semimet. 42, 621 (1966)

    Google Scholar 

  • F. Shimura, J. Appl. Phys. 59, 3251 (1986)

    Article  CAS  Google Scholar 

  • E. Simoen, Y.L. Huang, Y. Ma, J. Lauwaert, P. Clauws, J.M. Rafi, A. Ulyashin, C. Claeys, J. Electrochem. Soc. 156, H434 (2009)

    Article  CAS  Google Scholar 

  • L.C. Snyder, J.W. Corbett, P. Deak, R. Wu, Mat. Res. Soc. Proc. 104, 179 (1988)

    Article  CAS  Google Scholar 

  • H.J. Stein, S. Hahn, J. Appl. Phys. 75, 3477 (1994)

    Article  CAS  Google Scholar 

  • H.J. Stein, S.K. Hahn, S.C. Shatas, J. Appl. Phys. 59, 3495 (1986)

    Article  CAS  Google Scholar 

  • K. Sueoka, M. Akatsuka, M. Yonemura, T. Ono, E. Asayama, H. Katahama, J. Electrochem. Soc. 147, 756 (2000)

    Article  CAS  Google Scholar 

  • Q. Sun, K.H. Yao, H.C. Gatos, J. Lagowski, J. Appl. Phys. 71, 3760 (1992)

    Article  CAS  Google Scholar 

  • D. Suwito, U. Jager, J. Benick, S. Janz, M. Hermle, S.W. Glunz, IEEE Trans. Electron. Devices 57, 2032 (2010)

    Article  CAS  Google Scholar 

  • B.G. Svensson, J.L. Lindström, Phys. Stat. Sol. (A) 95, 537 (1986)

    Article  CAS  Google Scholar 

  • R. Swaroop, N. Kim, W. Lin, M. Bullis, L. Shive, A. Rice, E. Castel, M. Christ, Solid State Technol. 3, 85–89 (1987)

    Google Scholar 

  • T. Tachibana, K. Nakamura, A. Ogura, Y. Ohshita, T. Shimoda, I. Masada, E. Nishijima, AIP Adv. 7, 045111 (2017)

    Article  CAS  Google Scholar 

  • M. Tajima, H. Takeno, T. Abe, Mat. Sci. Forum 83–87, 1327 (1991)

    Google Scholar 

  • M. Tajima, M. Warashina, H. Takeno, T. Abe, Appl. Phys. Lett. 65, 222 (1994)

    Article  CAS  Google Scholar 

  • M. Tajima, Y. Iwata, F. Okayama, H. Toyota, H. Onodera, T. Sekiguchi, J. Appl. Phys. 111, 113523 (2012)

    Article  CAS  Google Scholar 

  • H. Takeno, Y. Hayamizu, K. Miki, J. Appl. Phys. 84, 3113 (1998)

    Article  CAS  Google Scholar 

  • Y. Tokuda, N. Kobayashi, A. Usami, Y. Inoue, M. Imura, J. Appl. Phys. 66, 3651 (1989)

    Article  CAS  Google Scholar 

  • Y. Tokuda, T. Shimokata, Y. Inoue, A. Usami, M. Imura, Semicond. Sci. Technol. 6, 66 (1991)

    Article  CAS  Google Scholar 

  • M. Tomassini, J. Veirman, R. Varache, E. Letty, S. Dubois, Y. Yu, Ø. Nielsen, J. Appl. Phys. 119, 084508 (2016)

    Article  CAS  Google Scholar 

  • K. Torigoe, T. Ono, J. Appl. Phys. 121, 215103 (2017)

    Article  CAS  Google Scholar 

  • V.J.B. Torres, J. Coutinho, R. Jones, M. Barroso, S. Öberg, P.R. Briddon, Physica B 376–377, 109 (2006)

    Article  CAS  Google Scholar 

  • L. Tsetseries, S. Wang, S.T. Pantelides, Appl. Phys. Lett. 88, 051916 (2006)

    Article  CAS  Google Scholar 

  • J. Vanhellemont, J. Appl. Phys. 78, 4297 (1995)

    Article  CAS  Google Scholar 

  • J. Vanhellemont, E. Simoen, A. Kaniava, M. Libezny, C. Claeys, J. Appl. Phys. 77, 5669 (1995)

    Article  CAS  Google Scholar 

  • J. Vanhellemont, K. Nakamura, E. Kamiyama, K. Sueoka, in Defects and Impurities in Silicon Materials, Lecture Notes in Physics, vol.916, ed. by Y. Yoshida G. Langouche (Springer Tokyo, 2015), pp. 181–240

    Google Scholar 

  • V.V. Voronkov, J. Cryst. Growth 59, 625 (1982)

    Article  CAS  Google Scholar 

  • V.V. Voronkov, R. Falster, J. Appl. Phys. 91, 5802 (2002)

    Article  CAS  Google Scholar 

  • V.V. Voronkov, G.I. Voronkova, A.V. Batunina, R. Falster, V.N. Golovina, A.S. Guliaeva, N.B. Tiurina, M.G. Milvidski, J. Electrochem. Soc. 147, 3899 (2000)

    Article  CAS  Google Scholar 

  • V.V. Voronkov, G.I. Voronkova, A.V. Batunina, R. Falster, V.N. Golovina, A.S. Guliaeva, N.B. Tiurina, M.G. Milvidski, Solid State Phenom. 131–133, 387 (2008)

    Google Scholar 

  • K. Wada, N. Inoue, Electrochem. Soc. Proc. 86–4, 778 (1986)

    Google Scholar 

  • P. Wagner, J. Hage, Appl. Phys. A 49, 123 (1989)

    Article  Google Scholar 

  • W. Wijaranakula, Appl. Phys. Lett. 59, 1608 (1991)

    Article  CAS  Google Scholar 

  • D. Wruck, P. Gaworzewski, Phys. Stat. Sol. (A) 56, 557 (1979)

    Article  CAS  Google Scholar 

  • Z. Xi, J. Tang, H. Deng, D. Yang, D. Que, Sol. Energy Mater. Sol. Cells 91, 1688 (2007)

    Article  CAS  Google Scholar 

  • D. Yang, H.J. Möller, Sol. Energy Mater. Sol. Cells 72, 541 (2002)

    Google Scholar 

  • X. Yu, D. Yang, X. Ma, J. Yang, L. Li, D. Que, J. Appl. Phys. 92, 188 (2002)

    Article  CAS  Google Scholar 

  • S. Zhang, M. Juel, E.J. Øvrelid, G. Tranell, J. Cryst. Growth 411, 63 (2015)

    Google Scholar 

  • J. Zhao, A. Wang, M.A. Green, Prog. Photovolt. Res. Appl. 7, 471 (1999)

    Article  CAS  Google Scholar 

  • M. Zschorsch, R. Hölzl, H. Rüfer, H.J. Möller, W. von Ammon, Solid State Phenom. 95–96, 71 (2004)

    Google Scholar 

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  1. IHP – Leibniz-Institut für innovative Mikroelektronik, Frankfurt (Oder), Germany

    G. Kissinger

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  1. Faculty of Physics - IV. Physical Institute - Ropers group, Georg-August-University Goettingen, Goettingen, Germany

    Michael Seibt

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Kissinger, G. (2019). Oxygen Impurity in Crystalline Silicon. In: Yang, D. (eds) Handbook of Photovoltaic Silicon. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-52735-1_20-1

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