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Electrical bistabilities behaviour of all-solution-processed non-volatile memories based on graphene quantum dots embedded in graphene oxide layers

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Abstract

This study demonstrates the feasibility of all-solution-processed mean to fabricate carbon-based non-volatile memory (NVM). The NVM devices were fabricated on polyethylene terephthalate (PET) substrate using spin-coating and spray-coating techniques in the structure of silver nanowires (AgNWs)/graphene oxide (GO)/graphene quantum dots (GQDs)/graphene oxide (GO)/poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS)/PET. PEDOT:PSS was used as the bottom conductive layer and deposited by spin-coating method. GQDs were used as a charge trapping site in the structure and embedded in the two GO insulator layers. The AgNW metal electrode was formed on top of GO/GQDs/GO/PEDOT:PSS by the spray-coating method. The overall smooth surface morphology of the spray-coated films serves as good contact with the top metal electrode. The electrical characterization of the fabricated device shows the bistable current states with the ON/OFF ratio of 105. The NVM device can be programmed and erased multiple times. Various conduction mechanisms were proposed to describe the charge trapping process in GQD based on the obtained current–voltage measurement.

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Acknowledgements

This study was financially supported by the Research University Grant from Universiti Kebangsaan Malaysia (GUP-2018-085), LRGS/NANOMITE/UKM-UKM/04/01 from the Ministry of Education Malaysia, and “Center for the Semiconductor Technology Research” from The Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education (MOE) in Taiwan. This work also supported in part by the Ministry of Science and Technology, Taiwan, under Grant MOST-108-3017-F-009-003. We would also like to further extend our gratitude to Skim Zamalah Penyelidik Tersorhor from Pusat Pengurusan Penyelidikan dan Instrumentasi (CRIM), Universiti Kebangsaan Malaysia.

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Authors and Affiliations

  1. Institute of Microengineering and Nanoelectronics, Universiti Kebangsaan Malaysia, 43600, Bangi, Malaysia

    Muhammad Musoddiq Jaafar, Poh Choon Ooi, M. F. Mohd. Razip Wee, Mohd Ambri Mohamed, Burhanuddin Yeop Majlis & Chang Fu Dee

  2. International College of Semiconductor Technology, National Chiao Tung University, University Road, Hsinchu, 30010, Taiwan, ROC

    Muhammad Musoddiq Jaafar & Edward Yi Chang

  3. Advanced Devices Lab, MIMOS Berhad, Technology Park Malaysia, 57000, Kuala Lumpur, Malaysia

    Muhammad Aniq Shazni Mohammad Haniff

  4. Department of Electronics Engineering, National Chiao Tung University, University Road, Hsinchu, 30010, Taiwan, ROC

    Edward Yi Chang

  5. Department of Materials Science and Engineering, National Chiao Tung University, University Road, Hsinchu, 30010, Taiwan, ROC

    Edward Yi Chang

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  1. Muhammad Musoddiq Jaafar
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  2. Poh Choon Ooi
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Correspondence to Poh Choon Ooi, M. F. Mohd. Razip Wee or Chang Fu Dee.

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Jaafar, M.M., Ooi, P.C., Mohd. Razip Wee, M.F. et al. Electrical bistabilities behaviour of all-solution-processed non-volatile memories based on graphene quantum dots embedded in graphene oxide layers. J Mater Sci: Mater Electron 30, 16415–16420 (2019). https://doi.org/10.1007/s10854-019-02015-3

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