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Spatially resolved photoelectric performance of axial GaAs nanowire pn-diodes

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Abstract

The spatially resolved photoelectric response of a single axial GaAs nanowire pn-diode has been investigated with scanning photocurrent and Kelvin probe force microscopy. Optical generation of carriers at the pn-junction has been shown to dominate the photoresponse. A photocurrent of 88 pA, an open circuit voltage of 0.56 V and a fill factor of 69% were obtained under AM 1.5 G conditions. The photocurrent followed the increasing photoexcitation with 0.24 A/W up to an illumination density of at least 90 W/cm2, which is important for potential applications in concentrator solar cells.

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Authors and Affiliations

  1. Center for Nanointegration Duisburg-Essen, University of Duisburg-Essen, 47048, Duisburg, Germany

    Andrey Lysov, Sasa Vinaji, Matthias Offer, Christoph Gutsche, Ingo Regolin, Wolfgang Mertin, Martin Geller, Werner Prost, Gerd Bacher & Franz-Josef Tegude

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  1. Andrey Lysov
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  2. Sasa Vinaji
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  3. Matthias Offer
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Correspondence to Andrey Lysov.

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Lysov, A., Vinaji, S., Offer, M. et al. Spatially resolved photoelectric performance of axial GaAs nanowire pn-diodes. Nano Res. 4, 987–995 (2011). https://doi.org/10.1007/s12274-011-0155-4

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  • DOI: https://doi.org/10.1007/s12274-011-0155-4

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