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Chemical Modification of Phase Change Memory Materials Based on Complex Chalcogenides

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Abstract

Chemical modification of amorphous thin films of phase change memory materials for optimizing the functional characteristics of these materials were considered by the example of the chalcogenide compound Ge2Sb2Te5. The doping elements were bismuth and tin. The films were produced by vacuum thermal deposition and magnetron sputtering with subsequent ion implantation of a dopant. Integrated studies of the modified thin films, which includes structural, optical, electrical, and thermal measurements, determined that the optimization of the functional properties of the materials for phase change memory devices is a multifactor process based on the identification of the basic correlations “composition–short-range order structure–property.”

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Funding

A part of the synthesis of phase change memory materials in this work was performed under a state assignment on basic scientific research for the Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Moscow, Russia. The study of the optical characteristics and morphology of the surface of thin films in this work was supported by the Russian Foundation for Basic Research (project no. 20-03-00379).

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Authors and Affiliations

  1. Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, 119991, Moscow, Russia

    S. A. Kozyukhin

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  1. S. A. Kozyukhin
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Correspondence to S. A. Kozyukhin.

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Translated by V. Glyanchenko

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Kozyukhin, S.A. Chemical Modification of Phase Change Memory Materials Based on Complex Chalcogenides. Russ. J. Inorg. Chem. 66, 281–287 (2021). https://doi.org/10.1134/S0036023621020108

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