Abstract
Implantation of nitrogen at 150 KeV and a dose of 1 ⊠ 1018/cm2 into (110) silicon results in the formation of an amorphized layer at the mean ion range, and a deeper tail of nitrogen ions. Annealing studies show that the amorphized layer recrystallizes into a continuous polycrystalline Si3N4 layer after annealing for 1 h at 1200 °C. In contrast, the deeper nitrogen fraction forms discrete precipitates (located 1μm below the wafer surface) in less than 1 min at this temperature. The arcal density of these precipitates is 5 ⊠ 107/cm2 compared with a nuclei density of 1.6 ⊠ 105/cm2 in the amorphized layer at comparable annealing times. These data suggest that the nucleation step limits the recrystallization rate of amorphous silicon nitride to form continuous buried nitride layers. The nitrogen located within the damaged crystalline silicon lattice precipitates very rapidly, yielding semicoherent crystallites of β–Si3N4.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
G. Zimmer and H. Vogt, IEEE Trans. Electron Devices ED-30, 1515 (1983).
E. H. Te Kaat and J. Belz, MRS Symposia Proc. 45, 329 (1985).
L. Nesbit, S. Stiffler, G. Slusser, and H. Vinton, J. Electrochem. Soc: Solid State Science and Tech. 132, 2713 (1985).
P. H. Chang, C. Slawinski, B.-Y. Mao, and H. W. Lam, J. Appl. Phys. 61, 166 (1987).
F. F. Komarov, I. A. Rogalevich, and V. S. Tishkov, Radiation Effects 39, 163 (1978).
P. Bourguet, J. M. Dupart, E. Le Tiran, P. Auvray, A. Guivarc’h, M. Selvi, G. Pelous, and P. Henoc, J. Appl. Phys. 51, 6169 (1980).
Y. Wada and N. Hashimoto, J. Appl. Phys. 50, 6257 (1979).
A. K. Datye, S. S. Tsao, and D. R. Myers, Proc. Ann. Meet. Electron Microsc. Soc. Amer. (EMSA), edited by G. W. Bailey (San Francisco Press, 1986), p. 734.
D. R. Myers, H. J. Stein, S. S. Tsao, G. W. Arnold, R. C. Hughes, W. M. Miller, R. V. Jones, and A. K. Datye, in Materials Modification and Growth Using Ion Beams, edited by U. J. Gibson, A. E. White, and P. P. Pronko, Mat. Res. Soc. Symp. Proc. 93, 113 (1987).
V. S. Kaushik, A. K. Datye, D. L. Kendall, B. Martinez-Tovar, and D. R. Myers, Appl. Phys. Lett. 52, 1782 (1988).
J. Belz, Ph.D. Thesis, Univ. of Dortmund (Germany), p. 48 (1986).
Certain commercial equipment, instruments, or materials are identified in this paper in order to specify the experimental procedure. Such identification does not imply recommendation or endorsements by the National Institute of Standards and Technology, nor does it imply that the materials or equipment identified are necessarily the best available for the purpose.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Kaushik, V.S., Datye, A.K., Kendall, D.L. et al. Kinetics of silicon nitride crystallization in N+-implanted silicon. Journal of Materials Research 4, 394–398 (1989). https://doi.org/10.1557/JMR.1989.0394
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1557/JMR.1989.0394