Abstract
The dissipation factor of aluminum nitride ceramics (AlN), doped with various concentrations of oxygen, is probed at 1 kHz before and after exposure to UV radiation. The results of this study show that UV photogenerated carriers, which are trapped at charged oxygen impurity related defect sites, are responsible for the observed dielectric loss. A simple energy level diagram is presented that outlines trapped carrier distributions within the AlN bandgap and is consistent with the experimentally observed changes in dissipation factor as a function of time, UV exposure, and exposure to visible light, which liberates carriers from charged trap sites.
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References
G.A. Slack, J. Phys. Chem. Solids 34, 321 (1973).
R. C. Enck and R. D. Harris, in Advanced Electronic Packaging Materials, edited by A. T. Barfknecht, J. P. Partridge, C. J. Chen, and C-Y. Li (Mater. Res. Soc. Symp. Proc. 167, Pittsburgh, PA, 1990), p. 235.
K. M. Taylor and C. Lenie, J. Electrochem. Soc. 107, 308 (1960).
R. D. Harris, R. C. Enck, and J. L. Fields, in Advanced Electronic Packaging Materials, edited by A. T. Barfknecht, J. P. Partridge, C.J. Chen, and C-Y. Li (Mater. Res. Soc. Symp. Proc. 167, Pittsburgh, PA, 1990), p. 229.
J.H. Harris, R.A. Youngman, and R.G. Teller, J. Mater. Res. 5, 1763 (1990).
N. Kuramoto, H. Taniguchi, Y. Numata, and I. Aso, Yogyo-Kyokai-Shi 93, 41 (1985).
G.A. Slack, R.A. Tanzilli, R.O. Pohl, and J.W. Vandersande, J. Phys. Chem. Solids 48, 641 (1987).
Y. Kurokawa, K. Utsumi, and H. Takamizawa, J. Am. Ceram. Soc. 71, 588 (1988).
A. Virkar, T. B. Jackson, and R. Cutler, J. Am. Ceram. Soc. 72, 203 (1989).
R.A. Youngman, J.H. Harris, and D.A. Chernoff, Ceram. Trans. 5, 399 (1989).
J. Pastrnak, S. Pocesova, and L. Roskovcova, Czech. J. Phys. B24, 1149 (1974).
R. A. Youngman and J. H. Harris, J. Am. Ceram. Soc. 73, 3238 (1990).
J.H. Harris and R.A. Youngman, J. Mater. Res. 8, 154 (1993).
J.H. Harris, R.C. Enck, and R.A. Youngman, Phys. Rev. B 47, 5428 (1993).
M. Zulfequar, D. B. Singh, and A. Kumar, Mater. Sci. Technol. 5, 403 (1989).
V.V. Lopatin and A.V. Kabyshev, Phys. Status Solidi A 116, 221 (1989).
R. A. Youngman, J. H. Harris, P. A. Labun, and R. J. Graham, in Advanced Electronic Packaging Materials, edited by A. T. Barfknecht, J. P. Partridge, C. J. Chen, and C-Y. Li (Mater. Res. Soc. Symp. Proc. 167, Pittsburgh, PA, 1990), p. 271.
I.C. Huseby and C.F. Bobik, U.S. Patent 4547471 (October 15, 1985).
N. Kuramoto, H. Taniguchi, and I. Aso, Adv. Ceram. 26, 107 (1989).
K. Komeya, H. Inoue, and A. Tsuge, Yogyo-Kyokai-Shi 89, 58 (1981).
It has been observed that annealing at 300 °C initiates radiative recombination of carriers trapped at oxygen-related defect sites. During the heating cycle, bright photoluminescence is observed, and after the cycle is complete, an originally photodarkened sample is returned to its original light tan color.
R.C. Enck and J.H. Harris, unpublished.
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Harris, J.H., Enck, R.C. UV induced dielectric loss in AlN ceramics. Journal of Materials Research 8, 2734–2740 (1993). https://doi.org/10.1557/JMR.1993.2734
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DOI: https://doi.org/10.1557/JMR.1993.2734