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Systematic trends of YBa2Cu3O7−δ thin films post annealed in low oxygen partial pressures

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Abstract

Systematic studies have been performed on 1000 Å YBa2Cu3O7−δ films produced by the BaF2 process and annealed in an oxygen partial pressure (Po2) range from 740 Torr to 10 mTorr as well as a temperature range from 600 to 1050 °C. The results show that while high quality films can be annealed in a wide range of oxygen partial pressure, they have different characteristics. In general, crystalline quality and Tc are optimized at high Po2 and high annealing temperature, while strong flux pinning and low normal state resistivity are achieved at lower values of both variables. Under optimized low Po2 conditions, an ion channeling Xmin of 6% is obtained on films as thick as 5000 Å. This study will serve as a useful guide to tailoring film properties to the application at hand.

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Authors and Affiliations

  1. AT&T Bell Laboratories, New Jersey, 07974, Murray Hill, USA

    S. Y. Hou, Julia M. Phillips, D. J. Werder, T. H. Tiefel & J. H. Marshall

  2. Sandia National Laboratories, New Mexico, 87185, Albuquerque, USA

    M. P. Siegal

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  1. S. Y. Hou
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  2. Julia M. Phillips
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  5. J. H. Marshall
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  6. M. P. Siegal
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Hou, S.Y., Phillips, J.M., Werder, D.J. et al. Systematic trends of YBa2Cu3O7−δ thin films post annealed in low oxygen partial pressures. Journal of Materials Research 9, 1936–1945 (1994). https://doi.org/10.1557/JMR.1994.1936

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