Skip to main content
SpringerLink
Log in

Finite element modeling of stress variation in multilayer thin-film specimens for in situ transmission electron microscopy experiments

  • Published:
Journal of Materials Research Aims and scope Submit manuscript

Abstract

Multilayer thin-film materials with various thicknesses, compositions, and deposition methods for each layer typically exhibit residual stresses. In situ transmission electron microscopy (TEM) is a powerful technique that has been used to determine correlations between residual stresses and the microstructure. However, to produce electron transparent specimens for TEM, one or more layers of the film are sacrificed, thus altering the state of stresses. By conducting a stress analysis of multilayer thin-film TEM specimens, using a finite element method, we show that the film stresses can be considerably altered after TEM sample preparation. The stress state depends on the geometry and the interactions among multiple layers.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

FIG. 1
FIG. 2
FIG. 3
FIG. 4
TABLE I.
FIG. 5
FIG. 6

Similar content being viewed by others

References

  1. R.P. Vinci, E.M. Zielinski J.C. Bravman: Thermal strain and stress in copper thin films. Thin Solid Films 262, 142 1995

    Article  CAS  Google Scholar 

  2. M.A. Korhonen, P. Borgesen C-Y. Li: Mechanisms of stress-induced and electromigration-induced damage in passivated narrow metallizations on rigid substrates. MRS Bull. 17(7), 1992

    Google Scholar 

  3. Critical Reliability Challenges for the International Technology Roadmap for Semiconductors, Reliability Technical Advisory Board (RTAB), International SEMATECH, 2003

  4. B. Li, T.D. Sullivan, T.C. Lee D. Badami: Reliability challenges for copper interconnects. Microelectron. Reliabil. 44, 365 2004

    Article  CAS  Google Scholar 

  5. Z.H. Shi, D. Onsongo, R. Rai, S.B. Samavedam S.K. Banerjee: Hole mobility enhancement and Si cap optimization in nanoscale strained Si1−xGex PMOSFETs. Solid State Electron. 48, 2299 2004

    Article  CAS  Google Scholar 

  6. D. Jawarani, H. Kawasaki, I-S. Yeo, L. Rabenberg, J.P. Stark P.S. Ho: In situ transmission-electron-microscopy study of plastic deformation in passivated Al–Cu thin films. J. Appl. Phys. 82, 171 1997

    Article  CAS  Google Scholar 

  7. S.P. Hau-Riege C.V. Thompson: In situ transmission electron microscope studies of the kinetics of abnormal grain growth in electroplated copper films. Appl. Phys. Lett. 76, 309 2000

    Article  CAS  Google Scholar 

  8. G. Dehm E. Arzt: In situ TEM study of dislocations in a polycrystalline Cu thin film constrained by a substrate. Appl. Phys. Lett. 77, 1126 2000

    Article  CAS  Google Scholar 

  9. J.H. An P.J. Ferreira: In situ transmission electron microscopy observations of 1.8 micron and 180 nm Cu interconnects under thermal stresses. Appl. Phys. Lett. 89, 151919 2006

    Article  Google Scholar 

  10. C.T. Chou, S.C. Anderson, D.J.H. Cockayne, A.Z. Sizorski M.R. Vaughan: Surface relaxation of strained heterostructures revealed by Bragg line splitting in LACBED patterns. Ultramicroscopy 55, 334 1994

    Article  CAS  Google Scholar 

  11. F. Houdellier, C. Roucau M-J. Casaonve: Convergent beam diffraction for strain determination at the nanoscale. Microelectron. Eng. 84, 464 2007

    Article  CAS  Google Scholar 

  12. J. Nucci, S. Kramer, E. Arzt C.A. Volkert: Local strains measured in Al lines during thermal cycling and eletromigration using convergent-beam electron diffraction. J. Mater. Res. 20, 1851 2005

    Article  CAS  Google Scholar 

  13. ABAQUS User’s Manual, version 6.6, Providence, RI, 2006

Download references

Acknowledgments

The authors would like to thank the Center for Nano and Molecular Science and Technology, the Texas Materials Institute and Freescale Semiconductors for their support of this research. The authors would also like to thank Dr. Martin Gall at Freescale Semiconductors for his useful discussions. R. Huang and H. Mei are grateful for the financial support by National Science Foundation through Grant CMS-0547409.

Author information

Authors and Affiliations

  1. Department of Aerospace Engineering and Engineering Mechanics, University of Texas, Austin, Texas, 78712, USA

    H. Mei & R. Huang

  2. Materials Science and Engineering Program, University of Texas, Austin, Texas, 78712, USA

    J. H. An & P. J. Ferreira

Authors
  1. H. Mei
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. J. H. An
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. R. Huang
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. P. J. Ferreira
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to P. J. Ferreira.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Mei, H., An, J.H., Huang, R. et al. Finite element modeling of stress variation in multilayer thin-film specimens for in situ transmission electron microscopy experiments. Journal of Materials Research 22, 2737–2741 (2007). https://doi.org/10.1557/JMR.2007.0341

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1557/JMR.2007.0341

Search

Navigation