Skip to main content
SpringerLink
Log in

Novel organic light-emitting transistors with PN-heteroboundary carrier recombination sites fabricated by lift-off patterning of organic semiconductor thin films

  • Published:
Journal of Materials Research Aims and scope Submit manuscript

Abstract

The authors have devised a novel organic light-emitting transistor (OLET) with a PN-heteroboundary combined with hole and electron transport materials (in other words, p-type and n-type organic semiconductors) along carrier channels. In this device, a clear modulation of the current and luminance with the gate voltage was observed. A luminance of 100 cd/m2 or more has been observed at the source–source voltage of 15 V with the turn-on voltage of 10 V or less, which is lower than that of OLETs based on a single organic material. The horizontal PN-heteroboundary structure has been implemented for the first time by using the photolithographic patterning of organic semiconductor thin films. This patterning technique can be applied to the fabrication of not only the OLETs reported in this work, but also to organic integrated circuits or organic displays.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

FIG. 1
FIG. 2
FIG. 3
FIG. 4
FIG. 5
FIG. 6
FIG. 7

Similar content being viewed by others

References

  1. A. Hepp, H. Heil, W. Weise, M. Ahles, R. Schmechel, H. von Seggern: Light-emitting field-effect transistor based on a tetracene thin film. Phys. Rev. Lett. 91, 157406 2003

    Article  Google Scholar 

  2. M. Ahles, A. Hepp, R. Schmechel, H. von Seggern: Light emission from a polymer transistor. Appl. Phys. Lett. 84, 428 2004

    Article  CAS  Google Scholar 

  3. T. Sakanoue, E. Fujiwara, R. Yamada, H. Tada: Visible light emission from polymer-based field-effect transistors. Appl. Phys. Lett. 84, 3037 2004

    Article  CAS  Google Scholar 

  4. T. Sakanoue, E. Fujiwara, R. Yamada, H. Tada: Preparation of organic light-emitting field-effect transistors with asymmetric electrodes. Chem. Lett. (Jpn.) 34, 494 2005

    Article  CAS  Google Scholar 

  5. T. Oyamada, H. Sasabe, C. Adachi, S. Okuyama, N. Shimoji, K. Matsushige: Electroluminescence of 2,4-bis(4-(2-thiophene-yl)phenyl)thiophene in organic light-emitting field-effect transistors. Appl. Phys. Lett. 86, 093505 2005

    Article  Google Scholar 

  6. J.S. Swensen, C. Soci, A.J. Heeger: Light emission from an ambipolar semiconducting polymer field-effect transistor. Appl. Phys. Lett. 87, 253511 2005

    Article  Google Scholar 

  7. J. Zaumseil, R.H. Friend, H. Sirringhaus: Spatial control of the recombination zone in an ambipolar light-emitting organic transistor. Nat. Mater. 5, 69 2006

    Article  CAS  Google Scholar 

  8. S. Steudel, K. Myny, S. De Vusser, J. Genoe, P. Heremans: Patterning of organic thin film transistors by oxygen plasma etch. Appl. Phys. Lett. 89, 183503 2006

    Article  Google Scholar 

  9. D.C. Duffy, R.J. Jackman, K.M. Vaeth, K.F. Jensen, G.M. Whitesides: Electroluminescent materials with feature sizes as small as 5 μm using elastomeric membranes as masks for dry lift-off. Adv. Mater. 11, 546 1999

    Article  CAS  Google Scholar 

  10. H. Tachikawa, H. Kawabata, R. Miyamoto, K. Nakayama, M. Yokoyama: Experimental and theoretical studies on the organic-inorganic hybrid compound: Aluminum-NTCDA co-deposited film. J. Phys. Chem. B 109, 3139 2005

    Article  CAS  Google Scholar 

  11. A. Dodabalapur, H.E. Katz, L. Torsi, R.C. Haddon: Organic heterostructure field-effect transistors. Science 269, 1560 1995

    Article  CAS  Google Scholar 

  12. C. Rost, S. Karg, W. Riess, M.A. Loi, M. Murgia, M. Muccini: Ambipolar organic field-effect transistor. Appl. Phys. Lett. 85, 1613 2004

    Article  CAS  Google Scholar 

Download references

ACKNOWLEDGMENTS

This work was supported by the Integrative Industry-Academia Partnership (IIAP) including Kyoto University, Nippon Telegraph and Telephone Corporation, Pioneer Corporation, Hitachi, Ltd., Mitsubishi Chemical Corporation, and Rohm Co., Ltd., as well as by the Special Coordination Funds for Promoting Science and Technology from the Ministry of Education, Culture, Sports, Science, and Technology of Japan.

Author information

Authors and Affiliations

  1. International Innovation Center, Kyoto University, Kyoto, 606-8501, Japan

    Naotoshi Suganuma

  2. Rohm Co., Ltd., Kyoto, 615-8585, Japan

    Noriyuki Shimoji & Yoshiaki Oku

  3. Department of Electronic Science & Technology, Kyoto University, Kyoto, 615-8510, Japan

    Kazumi Matsushige

Authors
  1. Naotoshi Suganuma
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Noriyuki Shimoji
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Yoshiaki Oku
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Kazumi Matsushige
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Naotoshi Suganuma.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Suganuma, N., Shimoji, N., Oku, Y. et al. Novel organic light-emitting transistors with PN-heteroboundary carrier recombination sites fabricated by lift-off patterning of organic semiconductor thin films. Journal of Materials Research 22, 2982–2986 (2007). https://doi.org/10.1557/JMR.2007.0393

Download citation

  • Received:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1557/JMR.2007.0393

Search

Navigation