Abstract
Gallium Nitride is of interest due to its direct bandgap, which allows for efficient emission in the near-UV range. Bulk GaN is already in use in solid-state devices that exploit its emissive properties, however, the promise of GaN nanocrystals as tunable emitters for use in light-emitting devices and lasers has led to the recent exploration of nanocrystalline GaN synthesis routes. Here we discuss the use of nonthermal plasmas for the synthesis of nanocrystalline pow-ders of GaN. The particles were examined using transmission electron microscopy and x-ray photoelectron spectroscopy.
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Acknowledgements
This work was supported in part by the MRSEC Program of the National Science Foundation under award number DMR-0212302 and by IGERT grant DGE-0114372.
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Anthony, R., Thimsen, E., Johnson, J. et al. A Non-thermal Plasma Reactor for the Synthesis of Gallium Nitride Nanocrystals. MRS Online Proceedings Library 892, 1105 (2005). https://doi.org/10.1557/PROC-0892-FF11-05
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DOI: https://doi.org/10.1557/PROC-0892-FF11-05