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Positron Annihilation Investigation in Ion-implanted Yttria-stabilized Zirconia

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Abstract

Implantation with a variety of sub-MeV ions (He, Ar, Xe, O, and I) were performed on cubic single crystals of yttria-stabilized zirconia in order to assess the capability of such material to withstand high fluences as a confinement matrix for nuclear waste. In this work, we confronted the results of both Doppler Broadening using slow positron implantation spectroscopy (DB-SPIS) and the Rutherford Backscattering/Channeling spectroscopy (RBS-C) which are sensitive to lattice defects almost opposite in nature. In spite of their difference in defect specific sensitivity, and except for a precursory damage production stage almost exclusively exhibited by SPIS for very low doses (< 0.1 dpa), either techniques show a similar fluence dependence, which exhibits 3 stages starting respectively around 0.1, 2 and 3 dpa, regardless of the damaging ion. However, owing to the stage I plateau displayed in the variation of the DB-SPIS lineshape parameter, we were able to estimate an ion-mass dependence of the critical size of open-volume defects reached before the production of new predominant defects.

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Authors and Affiliations

  1. DGA-DCE-CTA-LOT, 16 bis Av. Pr. de la Côte d’Or, Arcueil, 94114, France

    R. I. Grynszpan

  2. SERAM, Ecole Nationale Supérieure d’Arts et Métiers, Paris, 75013, France

    R. I. Grynszpan

  3. Forschungszentrum Rossendorf, Postfach 510119, Dresden, 01314, Germany

    G. Brauer & W. Anwand

Authors
  1. R. I. Grynszpan
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  2. G. Brauer
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  3. W. Anwand
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Correspondence to G. Brauer.

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Grynszpan, R.I., Brauer, G. & Anwand, W. Positron Annihilation Investigation in Ion-implanted Yttria-stabilized Zirconia. MRS Online Proceedings Library 908, 1001 (2005). https://doi.org/10.1557/PROC-0908-OO10-01

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