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Self-assembled nano-dots of heteroepitaxial SiC on Si

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Abstract

Self-assembled silicon carbide (SiC) nano-dots were fabricated on Si wafers by an organometallic ion beam deposition. The self-assembled SiC nano-dots have the shape of a tile, and were heteroepitaxial SiC on Si.

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Authors and Affiliations

  1. Research Institute for Innovation in Sustainable Chemistry, National Institute of Advanced Industrial Science and Technology (AIST), 1-8-31 Midorigaoka, Ikeda, Osaka, 563-8577, Japan

    Takashi Matsumoto, Masato Kiuchi, Satoshi Sugimoto & Seiichi Goto

  2. Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka, 565-0871, Japan

    Satoshi Sugimoto & Seiichi Goto

Authors
  1. Takashi Matsumoto
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  2. Masato Kiuchi
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  3. Satoshi Sugimoto
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  4. Seiichi Goto
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Matsumoto, T., Kiuchi, M., Sugimoto, S. et al. Self-assembled nano-dots of heteroepitaxial SiC on Si. MRS Online Proceedings Library 908, 1106 (2005). https://doi.org/10.1557/PROC-0908-OO11-06

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  • DOI: https://doi.org/10.1557/PROC-0908-OO11-06

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