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Nanopatterning of Si/SiGe Two-dimensional Hole Gases by PFOTS-aided AFM Lithography of Carrier Supply Layer

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Abstract

The nanopatterning of Si/SiGe layers by PFOTS (perfluorooctyl trichlorosilane) -aided AFM (atomic force microscopy) lithography is demonstrated. We use self-assembled PFOTS monolayers as a resist for AFM exposure and then transfer patterns in to underlying SiGe layers by a two-step selective wet etching. Minimum linewidths of 100nm can be achieved with improved uniformity and repeatability compared to AFM lithography without PFOTS. This lithography technique was used to pattern the carrier supply layer in Si/SiGe 2-D hole gases to localize holes for epitaxially passivated quantum dot applications.

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Authors and Affiliations

  1. Princeton Institute for the Science and Technology of Materials, Department of Electrical, Engineering, Princeton University, E-Quad, Olden Street, 08544, Princeton, NJ, USA

    Kun Yao & James C Sturm

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  1. Kun Yao
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  2. James C Sturm
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Yao, K., Sturm, J.C. Nanopatterning of Si/SiGe Two-dimensional Hole Gases by PFOTS-aided AFM Lithography of Carrier Supply Layer. MRS Online Proceedings Library 921, 208 (2006). https://doi.org/10.1557/PROC-0921-T02-08

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  • DOI: https://doi.org/10.1557/PROC-0921-T02-08

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