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Electron Transport in Semiconducting Chiral Carbon Nanotubes

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Abstract

We report on electron transport characteristics for semiconducting, single wall, chiral carbon nanotubes. The Boltzmann transport equation is solved indirectly by the Ensemble Monte Carlo method. The basis for the transport calculations is provided by electronic structure calculations within the framework of a simple tight binding model. Scattering mechanisms considered are due to the electron-phonon interactions involving longitudinal acoustic, longitudinal optic, and radial breathing mode phonons. Results show significantly increased Umklapp scattering processes due to the reduced Brillouin zone compared to zigzag nanotubes. However, the transient and steady-state transport characteristics are similar to those of zigzag CNTs with comparable diameter.

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Authors and Affiliations

  1. Electrical and Computer Engineering, Univeristy of Minnesota, 55455, Minneapolis, MN, USA

    M. Z. Kauser & P. P. Ruden

  2. Electrical and Computer Engineering, Georgia Institute of Technology, 30332, Atlanta, GA, USA

    A. Verma

Authors
  1. M. Z. Kauser
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  2. A. Verma
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  3. P. P. Ruden
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Kauser, M.Z., Verma, A. & Ruden, P.P. Electron Transport in Semiconducting Chiral Carbon Nanotubes. MRS Online Proceedings Library 922, 750 (2006). https://doi.org/10.1557/PROC-0922-U07-50

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  • DOI: https://doi.org/10.1557/PROC-0922-U07-50

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