Abstract
The complex dielectric function of molten silicon produced after picosecond illumination is found to be well described by a Drude model from 1.1 eV to 3.5 eV. Close to the melting temperature, we obtain ωp = 2.50 1016rad/s and τ = 212 10−18s. Transiently, the liquid temperature can exceed the melting temperature or even the boiling temperature Tb. We observe this transient heating and model it with a relatively simple computer code which includes superheating of the liquid above Tb. These measurements are possible thanks to a novel pump and probe technique.
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Fauchet, P.M., Li, K.D. Picosecond Laser Induced Melting: The Dielectric Function of Molten Silicon and Superheating in the Liquid Phase. MRS Online Proceedings Library 100, 477 (1987). https://doi.org/10.1557/PROC-100-477
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DOI: https://doi.org/10.1557/PROC-100-477