Abstract
The structure of ion-implanted a-Si has been studied using Raman spectroscopy. It is shown that the average bond-angle distortion and the strain energy stored in the random network vary drastically upon annealing. Relaxation is enhanced in the case of heating by laser irradiation. The results imply that the apparent melting temperature of a-Si may vary from one experiment to another, depending on the heating rate and -method.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
B.G. Bagley and H.S. Chen in Laser-Solid Interactions and Laser Processing - 1978, edited by S.D. Ferris, H.J. Leamy and J.M. Poate (AIP Conf. Proc. No. 50, New York, 1979), pp. 97–101.
F.Spaepen and D. Turnbull, ibid, [1], pp. 73–83.
P. Baeri, G. Foti, J.M. Poate and A.G. Cullis, Phys. Rev. Lett. 45, 2036 (1980) and in Laser and Electron-Beam Solid Interactions and Materials Processing, edited by J.F. Gibbons, L.D. Hess and T.W. Sigmon (MRS Symp. Proc. 1, North Holland, New York, 1981) pp. 39–44.
S.A. Kokorowski, G.L. Olson, J.A. Roth and L.D. Hess, Phys. Rev. Lett. 48, 498 (1982) and in Laser and Electron-Beam Interactions with Solids, edited by B.R. Appleton and C.K. Celler (MRS Symp. Proc. 4, North-Holland, New York, 1982), pp. 195–202.
M.O. Thompson, G.J. Galvin, J.W. Mayer, P.S. Peercy, J.M. Poate, D.C. Jacobson, A.G. Cullis and N.G. Chew, Phys. Rev. Lett. 52, 2360 (1984).
G.L. Olson, S.A. Kokorowski, J.A. Roth and L.D. Hess in Laser-Solid Interactions and Transient Thermal Processing of Materials, edited by J. Narayan, W.L. Brown and R.A. Lemons (MRS Symp. Proc. 13, North-Holland, New York, 1983), pp. 141–154.
G.L. Olson, J.A. Roth, E. Nygren, A.P. Pogany and J.S. Williams in Beam-Solid Interactions and Transient Processes, edited by M.O. Thompson, S.T. Picraux and J.S. Williams (MRS Symp. Proc. 74, MRS, Pittsburgh, Pennsylvania, 1987), pp. 109–115.
E.P. Donovan, F. Spaepen, D. Turnbull, J.M. Poate and D.C. Jacobson, J. Appl. Phys. 57, 1795 (1985).
D. Beeman, R. Tsu and M.F. Thorpe, Phys. Rev. B22, 874 (1985).
R. Tsu, J. Gonzalez-Hernandez and F.H. Pollak, J. Non-Cryst. Sol. 66, 109 (1984) and Solid State Commun. 54, 447 (1985).
W. Sinke, T. Warabisako, M. Miyao, T. Tokuyama, S. Roorda and F.W. Saris, (a) to be published in the Proc. of the Ε-MRS Meeting, Strasbourg, 1987 and (b) to be published in the J. Non-Cryst. Sol..
R. Tsu, J. Gonzalez-Hernandez, J. Doehler and S.R. Ovshinski, Solid State Commun. 46, 79 (1983).
Ν. Ishii, M. Kumeda and T. Shimizu, Solid Slate Commun. 50, 367 (1984).
C.K. Wong and G. Lucovski in Materials Issues in Amorphous-Semiconductor Technology, edited by D. Adler, Y. Hamakawa and A. Madan (MRS Symp. Proc. 70, MRS, Pittsburg, Pennsylvania, 1986), p. 77–82.
T. Okada, T. Iwaki, H. Kasahara and K. Yamamoto, Jpn. J. Appl. Phys. 24, 161 (1985).
T. Saito, T. Karasawa and I. Ohdomari, J. Non-Cryst. Sol. 50, 271 (1982).
The expression for ΔΘb vs. Γ/2 (formula 1) and that for UΘ vs. ΔΘb (formula 2) used in this paper differ from those given by Tsu et al. [10]. These differences are due to an uncertainty in the relation between the Raman spectrum and the degree of disorder in a-Si and to different estimates of the elastic constant β. We feel that the expressions used here yield more realistic values of the strain energy than the expressions in [10].
J.E. Smith, Jr., M.H. Brodsky, B.L. Crowder and M.I. Nathan, J. Non-Cryst. Sol. 8–10, 179 (1972).
M. Wautelet, P. Quenon and A. Jadin, to be published in Semicond. Sci. Technol. (1987).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Sinke, W.C., Warabisako, T., Miyao, M. et al. Transient Structural Relaxation and Melting Temperature of Amorphous Silicon. MRS Online Proceedings Library 100, 549 (1987). https://doi.org/10.1557/PROC-100-549
Published:
DOI: https://doi.org/10.1557/PROC-100-549