Abstract
The lifetime of optically injected carriers is determined in polySi/SiO2/Si structures grown by LPCVD at 625 °C. These samples are as-grown, have undergone H diffusion or have been implanted by phosphorous ions, followed by various annealing schedules. The lifetime measurement is done in an all-optical, contactless fashion, using the tools of picosecond time-resolved spectroscopy. We find that the lifetime due to recombination at the grain boundaries (trapping time) increases after implantation only if subsequent annealing increases the grain size. The trapping time also increases after hydrogen diffusion. After trapping in relatively shallow grain boundary states, thermalization into deeper lying states is slow on a subnanosecond time scale.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
B-Y. Tsaur, in Semiconductor-on-Insulator and Thin Film Transistor Technology, A.Chiang, M.W. Geis and L. Pfeiffer editors, Materials Research Society Symposia Proceedings, vol. 53, MRS, Pittsburgh, 1986, p. 365.
D.H. Auston, in Picosecond Optoelectronic Devices, C.H. Lee editor, Academic Press, Orlando, 1984, p. 73.
T.I. Kamins, M.M. Mandurah and K.C. Saraswat, J. Electroch. Soc. 125, 927 (1978); K.C. Saraswat, in’ Grain Boundaries in Semiconductors, C.H. Seager, G.E. Pike and H.J. Leamy editors, Elsevier, New York, 1982.
I.H. Campbell and P.M. Fauchet, Solid State Commun. 58, 739 (1986).
P.M. Fauchet and W.L. Nighan, Jr., Appl. Phys. Lett. 48, 721 (1986).
N.K. Bambha, W.L. Nighan, Jr., I.H. Campbell, P.M. Fauchet and N.M. Johnson, J. Appl. Phys., in press (1988).
O.S. Heavens, Optical Properties of Thin Solid Films, Dover Publications, New York, 1955.
F.E. Doany, D. Grischkowsky and C.-C. Chi, Appl. Phys. Lett. 50, 460 (1987).
P.M. Fauchet, D. Hulin,A. Migus, A. Antonetti, J. Kolodzey and S. Wagner, Phys. Rev. Lett. 57, 2438 (1986).
J.Y. Seto, J. Appl. Phys. 46, 5247 (1975).
G. Baccarani, B. Ricco and G. Spadini, J. Appl. Phys. 49, 5565 (1978).
W.B. Jackson, N.M. Johnson and D.K. Biegelsen, Appl. Phys. Lett. 43, 195 (1983).
Z. Vardeny, J. Strait and J. Tauc, Appl. Phys. Lett. 42, 580 (1983).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Bambha, N.K., Nighan, W.L., Campbell, I.H. et al. Picosecond Optical Determination of Carrier Lifetime in Polysilicon Films. MRS Online Proceedings Library 106, 323 (1987). https://doi.org/10.1557/PROC-106-323
Published:
DOI: https://doi.org/10.1557/PROC-106-323