Abstract
Phosphorus and Boron doping effects on the microstructure of nanocrystallites in hydrogenated amorphous and nanocrystalline mixed-phase silicon films were investigated using Raman spectroscopy, secondary ion mass spectrometry, cross-sectional transmission electron microscopy, atomic force microscopy, and conductive atomic force microscopy. The characterizations revealed the following observations. First, the mixed-phase Si:H films can be heavily doped in ˜1021/cm3 by adding PH3 and BF3 in the precursor gases. Second, the intrinsic and doped films can be made in a similar crystalline volume fraction by adjusting hydrogen dilution ratio. The hydrogen dilution ratio is much higher for P-doped films than for the intrinsic film with the similar crystallinity. Third, the doping impacts the nanostructures in the films significantly. Nanograins aggregate to form cone-shaped clusters in the intrinsic and B-doped films but isolate and randomly distribute in amorphous tissues in the P-doped films. The cones in the intrinsic and B-doped films are also different. The cone-angle is smaller and the nanograin density is lower in the B-doped films than in the intrinsic films. These P- and B-doping effects on the nanocrystalline formation are interpreted in terms of diffusions of Si-related radicals during the film growth.
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S. Nakayama, I. Kawashima, and J. Murota, J. Electrochem. Soc: Solid State Science & Technol. 133, 1721 (1986).
R. Saleh and N.H. Nickel, Thin Solid Films 427, 266 (2003).
P. Kumar and B. Schroeder, Thin Solid Films 516, 580 (2008).
T. Matsui, M. Kondo, and A. Matsuda, J. Non-Cryst. Solids 338–340, 646 (2004).
B. Yan, C.-S. Jiang, C.W. Teplin, H.R. Moutinho, M.M. Al-Jassim, J. Yang, and S. Guha, J. Appl. Phys. 101, 033712 (2007).
C.-S. Jiang, B. Yan, H.R. Moutinho, M.M. Al-Jassim, J. Yang, and S. Guha, Mater. Res. Soc. Symp. Proc. 989, 15 (2007).
For a review, see A. V. Shah, J. Meier, E. Vallat-Sauvain, N. Wyrsch, U. Kroll, C. Droz, and U. Graf, Sol. Energy Mater. Sol. Cells 78, 469 (2003).
R.W. Collins, A.S. Ferlauto, G.M. Ferreira, C. Chen, J. Koh, R.J. Koval, Y. Lee, J.M. Pearce, and C.R. Wronski, Sol. Energy Mater. Sol. Cells 78, 143 (2003).
C.W. Teplin, E. Iwaniczko, B. To, H. Moutinho, P. Stradins, and H.M. Branz, Phys. Rev. B 74, 235428 (2006).
A. Matsuda, Thin Solid Films 337, 1 (1999).
C.W. Teplin, C.-S. Jiang, P. Stradins, and H.M. Branz, Appl. Phys. Lett. 92, 093114 (2008).
For a review, see T.I. Kamins, Polycrystalline Silicon for Integrated Circuit Applications (Kluwer Academic, Boston, 1997), p.32.
T. Toyama, W. Yoshida, Y. Sobajima, and H. Okamoto, J. Non-Cryst. Solids 354, 2204 (2008).
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Jiang, CS., Yan, Y., Moutinho, H.R. et al. Phosphorus and Boron Doping Effects on Nanocrystalline Formation in Hydrogenated Amorphous and Nanocrystalline Mixed-Phase Silicon Thin Films. MRS Online Proceedings Library 1153, 1707 (2008). https://doi.org/10.1557/PROC-1153-A17-07
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DOI: https://doi.org/10.1557/PROC-1153-A17-07